公开(公告)号：WO2021158994A1

公开(公告)日：2021-08-12

申请号：PCT/US2021/016923

申请日：2021-02-05

Applicant: SUNRISE MEMORY CORPORATION

Inventor： NORMAN, Robert D. ,  HARARI, Eli ,  QUADER, Khandker Nazrul ,  LEE, Frank Sai-keung ,  CHERNICOFF, Richard S. ,  KIM, Youn Cheul ,  MOFIDI, Mehrdad

IPC: G06F12/08

Abstract: A high-capacity system memory may be built from both quasi-volatile (QV) memory circuits, logic circuits, and static random-access memory (SRAM) circuits. Using the SRAM circuits as buffers or cache for the QV memory circuits, the system memory may achieve access latency performance of the SRAM circuits and may be used as code memory. The system memory is also capable of direct memory access (DMA) operations and includes an arithmetic logic unit for performing computational memory tasks. The system memory may include one or more embedded processor. In addition, the system memory may be configured for multi-channel memory accesses by multiple host processors over multiple host ports. The system memory may be provided in the dual-in-line memory module (DIMM) format.

公开(公告)号：WO2021159028A1

公开(公告)日：2021-08-12

申请号：PCT/US2021/016964

申请日：2021-02-05

Applicant: SUNRISE MEMORY CORPORATION

Inventor： KIM, Youn Cheul ,  CHERNICOFF, Richard S. ,  QUADER, Khandker Nazrul ,  NORMAN, Robert D. ,  YAN, Tianhon ,  SALAHUDDIN, Sayeef ,  HARARI, Eli

IPC: H01L25/00 ,  H01L25/065 ,  G06F3/0611 ,  G06F3/0631 ,  H01L2224/211 ,  H01L2224/214 ,  H01L2225/1047 ,  H01L24/20 ,  H01L25/18 ,  H01L2924/1431 ,  H01L2924/1435

Abstract: A first circuit formed on a first semiconductor substrate is wafer-bonded to a second circuit formed on a second memory circuit, wherein the first circuit includes quasi-volatile or non-volatile memory circuits and wherein the second memory circuit includes fast memory circuits that have lower read latencies than the quasi-volatile or non-volatile memory circuits, as well as logic circuits. The volatile and non-volatile memory circuits may include static random-access memory (SRAM) circuits, dynamic random-access memory (DRAM) circuits, embedded DRAM (eDRAM) circuits, magnetic random-access memory (MRAM) circuits, embedded MRAM (eMRAM), or any suitable combination of these circuits.