公开(公告)号：WO1992015406A1

公开(公告)日：1992-09-17

申请号：PCT/US1992001444

申请日：1992-02-24

Applicant: SUPERCONDUCTOR TECHNOLOGIES, INC.

Inventor： SUPERCONDUCTOR TECHNOLOGIES, INC. ,  JAMES, Timothy, Walton ,  FLEMING, Julia, Sophia

IPC: B05D05/12

CPC classification number: H01L39/225 ,  H01L39/2496 ,  Y10S505/701 ,  Y10S505/702 ,  Y10S505/728 ,  Y10S505/732

Abstract: Devices from and a method for generating repeatable and reproducible crystallographic grain-boundary junctions are provided by forming a film on a crystalline substrate which has intersecting faces. In a preferred embodiment, a single crystal substrate (10) is etched by an anisotropic etchant to provide a ''V''-groove in one face, and an epitaxial superconducting film (16) is grown on the faces (14) of the V-groove. In another preferred embodiment, a step is etched with an anisotropic etch, and an epitaxial superconducting film grown on the step. Grain-boundary junctions are formed at the points (20) of intersection of the faces with each other, or with the faces (18) and the surface of the substrate. The film may be patterned and etched in the area of the boundary junction to form useful devices. One useful device is a SQUID formed with the boundary junction at the bottom of a V-groove. Another useful device is serially connected junctions.

Abstract translation: 通过在具有相交面的晶体衬底上形成膜来提供用于产生可重复和可再现的结晶晶界结的装置和方法。 在优选实施例中，通过各向异性蚀刻剂对单晶衬底（10）进行蚀刻，以在一个面中提供“V”形槽，并且外延超导膜（16）生长在 V形槽。 在另一优选实施例中，通过各向异性蚀刻蚀刻步骤，并在该步骤上生长外延超导膜。 在面彼此相交的点（20）处，或者与面（18）和衬底的表面相交的点（20）处形成晶界结。 该膜可以在边界结的区域中被图案化和蚀刻以形成有用的装置。 一个有用的装置是在V形槽的底部形成边界结的SQUID。 另一个有用的装置是串联的连接点。

公开(公告)号：WO1992006798A1

公开(公告)日：1992-04-30

申请号：PCT/US1991007381

申请日：1991-10-03

Applicant: SUPERCONDUCTOR TECHNOLOGIES, INC.

Inventor： SUPERCONDUCTOR TECHNOLOGIES, INC. ,  JAMES, Timothy, Walton ,  NILSSON, Boo, Jorten, Lars

IPC: B05D05/12

CPC classification number: H01L39/2448 ,  C23C14/087 ,  C30B23/002 ,  C30B23/02 ,  C30B29/22 ,  C30B29/225 ,  Y10S505/73 ,  Y10S505/732

Abstract: In situ vapor phase growth of thallium containing superconductors is achieved by controlling thallium volatility. Thallium volatility is controlled by providing active oxygen at the surface of the growing material and by avoiding collisions of energetic species with the growing material. In the preferred embodiment, a thallium containing superconductor is grown by laser ablation of a target, and by provision of oxygen during growth. More specificially, a source of thallium, calcium, barium, copper and oxygen is created by laser ablation of a thallium rich target (20), generating an ablation plume (36) that is directed onto a heated substrate (12) through the oxygen, with the plume passing through oxygen having a pressure from 10 to ten torr. Epitaxial superconducting thin films of thallium, calcium, barium, copper and oxygen have been grown by this technique. Various superconducting phases may be engineered through use of this method.

Abstract translation: 通过控制铊挥发性来实现含铊超导体的原位气相生长。 铊挥发性通过在生长材料的表面提供活性氧并通过避免能量物种与生长材料的碰撞来控制。 在优选实施例中，含铊的超导体通过靶的激光烧蚀和生长期间的氧气生长。 更具体地，铊，钙，钡，铜和氧的来源通过富铊靶（20）的激光烧蚀产生，产生通过氧引导到加热的衬底（12）上的消融羽流（36） 其中羽流通过氧气，压力为10 -2至10托。 已经通过这种技术生长了铊，钙，钡，铜和氧的外延超导薄膜。 可以通过使用这种方法来设计各种超导相。

公开(公告)号：WO1994005022A1

公开(公告)日：1994-03-03

申请号：PCT/US1993007701

申请日：1993-08-16

Applicant: SUPERCONDUCTOR TECHNOLOGIES, INC.

Inventor： SUPERCONDUCTOR TECHNOLOGIES, INC. ,  JAMES, Timothy, Walton ,  BOURNE, Lincoln, C.

IPC: H01G01/01

CPC classification number: H01G4/008 ,  G01R33/34007 ,  G01R33/34023 ,  G01R33/34053 ,  G01R33/341 ,  G01R33/3642 ,  G01R33/3671 ,  H01F6/06 ,  H01P1/203 ,  H01P7/08 ,  H01P7/088 ,  H01Q1/364 ,  H03K17/78 ,  H03K17/92 ,  H03K2217/0036

Abstract: Control elements for RF antennas including high temperature superconducting capacitors (24) are formed. In one embodiment, a high temperature superconducting capacitor (24) is coupled to an inductor (22) to form a resonant circuit (20). In another embodiment a high temperature superconducting capacitor (32) is used to make a low-resistance cross-over (33) for an inductor (31). Additional circuits include circuits which do not use non-superconducting materials in the circuit, circuits which have coupled superconducting inductors (50, 51) for low-loss signal coupling, tuning and bandwidth broadening, and circuits which include switches to shut off the superconductivity of a superconductive element including low-loss photoconducting (70) and superconducting thermal (61) switches. These circuits are useful in Magnetic Resonance Imaging devices.

Abstract translation: 形成包括高温超导电容器（24）的RF天线的控制元件。 在一个实施例中，高温超导电容器（24）耦合到电感器（22）以形成谐振电路（20）。 在另一个实施例中，高温超导电容器（32）用于对电感器（31）进行低电阻交叉（33）。 附加电路包括在电路中不使用非超导材料的电路，具有用于低损耗信号耦合，调谐和带宽拓宽的耦合超导电感器（50,51）的电路以及包括用于切断超导电感 包括低损耗光导（70）和超导热（61）开关的超导元件。 这些电路在磁共振成像装置中是有用的。

公开(公告)号：WO1992020108A1

公开(公告)日：1992-11-12

申请号：PCT/US1992004032

申请日：1992-05-08

Applicant: SUPERCONDUCTOR TECHNOLOGIES, INC.

Inventor： SUPERCONDUCTOR TECHNOLOGIES, INC. ,  JAMES, Timothy, Walton ,  FORSE, Roger, James

IPC: H01L39/22

CPC classification number: H01L23/49888 ,  H01L2224/16

Abstract: A multichip interconnect module utilizes superconducting conductors to provide improved speed and reduced power dissipation. In one embodiment, x-direction and y-direction conductor units each comprise a substrate (30, 32) having alternating superconducting conductors (20) and ground plane lines (22), where the ground plane lines (22) are connected by bridge-like interconnects (24), where the x-direction and y-direction conductor units are selectively electrically connected. In another embodiment, a superconducting microstrip arrangement utilizes two or more structures having a substrate (30, 32), ground plane (20), insulator (46) and superconducting conductor stacked structure (22). Selective electrical interconnects (34) are made between the structures.

Abstract translation: 多芯片互连模块利用超导导体提供改进的速度并降低功耗。 在一个实施例中，x方向和y方向导体单元各自包括具有交替的超导导体（20）和接地平面线（22）的衬底（30,32），其中接地平面线（22） （24），其中x方向和y方向的导体单元选择性地电连接。 在另一个实施例中，超导微带布置利用具有衬底（30,32），接地平面（20），绝缘体（46）和超导导体堆叠结构（22）的两个或多个结构。 在结构之间形成选择性电互连（34）。