公开(公告)号：WO1996013046A1

公开(公告)日：1996-05-02

申请号：PCT/JP1995002125

申请日：1995-10-17

Applicant: TDK CORPORATION

Inventor： TDK CORPORATION ,  SATO, Akira ,  KAWANO, Naoki ,  NOMURA, Takeshi ,  NAKANO, Yukie ,  ARASHI, Tomohiro ,  YAMAMATSU, Junko

IPC: H01G04/12

CPC classification number: B32B18/00 ,  B32B2311/22 ,  C04B35/4682 ,  C04B35/6264 ,  C04B35/63424 ,  C04B35/638 ,  C04B35/64 ,  C04B2235/3205 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/3215 ,  C04B2235/3225 ,  C04B2235/3239 ,  C04B2235/3256 ,  C04B2235/3262 ,  C04B2235/3418 ,  C04B2235/6582 ,  C04B2235/6584 ,  C04B2235/6588 ,  C04B2235/663 ,  C04B2235/765 ,  C04B2235/768 ,  C04B2235/785 ,  C04B2237/12 ,  C04B2237/346 ,  C04B2237/40 ,  C04B2237/405 ,  C04B2237/704 ,  C04B2237/706 ,  H01G4/1227

Abstract: A multilayer ceramic chip capacitor which meets the X7R characteristic, namely, the temperature characteristic of a capacitor, has an excellent DC bias characteristic, and is hardly broken down dielectrically, the capacitance of which does not change much with time in a DC electric field, and the insulation resistance IR of which endures a long accelerated life test. In the first mode of this invention, a dielectric layer contains BaTiO3 as a pricipal constituent, and MgO, Y2O3, BaO, and CaO and/or SiO2 as accessory constituents at a prescribed composition. In the second mode, MnO, and V2O5 and/or MoO3 are added to the dielectric layer as accessory constituents at a prescribed composition. In the first mode, the mean crystal grain size of the dielectric layer is below 0.45 mu m and wide diffraction lines are formed by the overlap of diffraction lines of (200)-face with the diffraction lines of (002)-face in the X-ray diffraction chart of the dielectric layer. The half-value widths of the wide diffraction lines are below 0.35 DEG .

Abstract translation: 符合X7R特性的多层陶瓷片式电容器，即电容器的温度特性，具有优异的直流偏压特性，并且几乎不会在直流电场中电容随时间变化的介电分解， 其绝缘电阻IR耐久长寿命试验。 在本发明的第一方式中，电介质层含有BaTiO 3作为主要成分，MgO，Y2O3，BaO，CaO和/或SiO 2作为附加成分。 在第二模式中，MnO和V2O5和/或MoO3以规定的组成添加到作为辅助成分的介电层中。 在第一模式中，电介质层的平均晶粒尺寸低于0.45μm，并且通过（200）面的衍射线与X（002）面的衍射线的重叠，形成宽的衍射线 电介质层的射线衍射图。 宽衍射线的半值宽度低于0.35°。