公开(公告)号：WO2017078133A1

公开(公告)日：2017-05-11

申请号：PCT/JP2016/082783

申请日：2016-11-04

申请人： TETRA LAVAL HOLDINGS & FINANCE S.A. ,  KEIO UNIVERSITY

发明人： SUZUKI, Tetsuya ,  FUTAGAMI, Yuya ,  SHIRAKURA, Akira ,  ONO, Kazuya

IPC分类号： C23C16/54 ,  C23C16/40 ,  C23C16/26 ,  C08J7/14

CPC分类号： C23C16/545 ,  C23C16/26 ,  C23C16/401

摘要： The aim of the present invention lies in inexpensively providing a thin-film laminated film having excellent barrier properties. A further aim of the present invention lies in providing a method for producing a thin-film laminated film in which a plurality of thin films are coated on a plastic film by means of atmospheric-pressure plasma CVD which has low equipment costs and running costs, and also in providing a thin-film laminated film production apparatus which is able to operate continuously for a long period of time and can produce high-speed coating. A thin film according to the present invention includes a plastic film, a first silicon oxide-based thin film containing silicon oxide as the main component, and a first amorphous carbon-based thin film. The first amorphous carbon-based thin film is formed on the first silicon oxide-based thin film. The first silicon oxide-based thin film has pinholes with a diameter in the range of 10-200 nm.

摘要翻译： 本发明的目的在于以低成本提供具有优异阻隔性能的薄膜层压膜。 本发明的另一个目的在于提供一种制造薄膜层压薄膜的方法，其中借助于具有低设备成本和运行成本的常压等离子体CVD将多个薄膜涂覆在塑料薄膜上， 并且还提供一种能够长时间连续操作并能够产生高速涂布的薄膜层压膜生产设备。 根据本发明的薄膜包括塑料膜，包含氧化硅作为主要成分的第一氧化硅基薄膜和第一无定形碳基薄膜。 第一无定形碳基薄膜形成在第一氧化硅基薄膜上。 第一种氧化硅基薄膜具有直径在10-200nm范围内的针孔。