公开(公告)号：WO2018098202A1

公开(公告)日：2018-05-31

申请号：PCT/US2017/062900

申请日：2017-11-21

Applicant: APPLIED MATERIALS, INC.

Inventor： CHATTERJEE, Sukti ,  SCUDDER, Lance A. ,  LIU, Eric H. ,  NARWANKAR, Pravin K. ,  MANNA, Pramit ,  MALLICK, Abhijit

IPC: H01L21/02 ,  H01L21/324

CPC classification number: C23C16/448 ,  C23C16/24 ,  C23C16/325 ,  C23C16/345 ,  C23C16/401 ,  C23C16/52 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02219 ,  H01L21/02277 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02664

Abstract: In some embodiments, a method of processing a substrate disposed within a processing volume of a hot wire chemical vapor deposition (HWCVD) process chamber, includes: (a) providing a silicon containing precursor gas into the processing volume, the silicon containing precursor gas is provided into the processing volume from an inlet located a first distance above a surface of the substrate; (b) breaking hydrogen-silicon bonds within molecules of the silicon containing precursor via introduction of hydrogen radicals to the processing volume to deposit a flowable silicon containing layer atop the substrate, wherein the hydrogen radicals are formed by flowing a hydrogen containing gas over a plurality of wires disposed within the processing volume above the substrate and the inlet.

公开(公告)号：WO2018063825A1

公开(公告)日：2018-04-05

申请号：PCT/US2017/051794

申请日：2017-09-15

Applicant: LAM RESEARCH CORPORATION

Inventor： VARADARAJAN, Bhadri N. ,  GONG, Bo ,  YUAN, Guangbi ,  GUI, Zhe ,  LAI, Fengyuan

IPC: H01L21/02

CPC classification number: H01L21/02216 ,  C23C14/48 ,  C23C16/325 ,  C23C16/401 ,  C23C16/45523 ,  C23C16/45525 ,  C23C16/50 ,  H01J37/32009 ,  H01J37/3244 ,  H01J2237/334 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/768 ,  H01L21/7682 ,  H01L21/76822 ,  H01L21/76831 ,  H01L21/76834 ,  H01L29/4983 ,  H01L29/78

Abstract: Provided are methods and apparatuses for depositing a graded or multi-layered silicon carbide film using remote plasma. A graded or multi-layered silicon carbide film can be formed under process conditions that provide one or more organosilicon precursors onto a substrate in a reaction chamber. Radicals of source gas in a substantially low energy state, such as radicals of hydrogen in the ground state, are provided from a remote plasma source into reaction chamber. In addition, co-reactant gas is flowed towards the reaction chamber. In some implementations, radicals of the co-reactant gas are provided from the remote plasma source into the reaction chamber. A flow rate of the co-reactant gas can be changed over time, incrementally or gradually, to form a multi-layered silicon carbide film or a graded silicon carbide film having a composition gradient from a first surface to a second surface of the graded silicon carbide film.

Abstract translation: 提供了使用远程等离子体沉积分级或多层碳化硅膜的方法和设备。 渐变或多层碳化硅膜可以在向反应室中的基底提供一种或多种有机硅前体的工艺条件下形成。 处于基本低能量状态的源气体例如基态氢的自由基从远程等离子体源提供到反应室中。 另外，共反应气体流向反应室。 在一些实施方式中，共反应气体的自由基从远程等离子体源提供到反应室中。 共反应气体的流速可随时间递增地或逐渐地变化以形成具有从渐变硅的第一表面到第二表面的组成梯度的多层碳化硅膜或渐变碳化硅膜 碳化物薄膜。

公开(公告)号：WO2017218561A1

公开(公告)日：2017-12-21

申请号：PCT/US2017/037291

申请日：2017-06-13

Applicant: GVD COPRORATON

Inventor： O'SHAUGHNESSY, W. Shannan ,  MORRISON, Scott W. ,  NOWAK, R. Austin

IPC: B05D1/00 ,  C07F7/21 ,  C23C16/40 ,  H01L21/02

CPC classification number: H01L21/02274 ,  A61N1/00 ,  B05D1/62 ,  B05D2518/10 ,  C08G77/045 ,  C08J5/18 ,  C08J2383/07 ,  C08K5/14 ,  C23C16/401 ,  C23C16/50 ,  C23C16/505 ,  C23C2222/20 ,  H01L21/02118 ,  H01L21/02126 ,  H01L21/02216

Abstract: Methods for plasma depositing polymers comprising cyclic siloxanes and related articles and compositions are generally provided. In some embodiments, the methods comprise flowing a precursor gas in proximity to a substrate (150) within a PECVD reactor, wherein the precursor gas comprises an initiator (120) and at least one monomer (110) comprising a cyclic siloxane (118) and at least two vinyl groups (114), and depositing a polymer (140) formed from the at least one monomer on the substrate.

Abstract translation: 通常提供用于等离子体沉积包含环状硅氧烷的聚合物和相关物品和组合物的方法。 在一些实施方案中，所述方法包括使前体气体在PECVD反应器内靠近衬底（150）流动，其中所述前体气体包含引发剂（120）和至少一种包含环状硅氧烷（118）的单体（110）和 至少两个乙烯基（114），和在基材上沉积由至少一种单体形成的聚合物（140）。

公开(公告)号：WO2017137773A1

公开(公告)日：2017-08-17

申请号：PCT/GB2017/050366

申请日：2017-02-10

Applicant: PILKINGTON GROUP LIMITED

Inventor： VARANASI, Srikanth ,  NI, Jun ,  NELSON, Douglas Martin

IPC: C23C16/40 ,  C03C17/245

CPC classification number: C23C16/405 ,  C03C17/002 ,  C03C17/245 ,  C03C17/2456 ,  C03C2217/23 ,  C03C2217/71 ,  C03C2218/1525 ,  C23C16/401

Abstract: A chemical vapor deposition process for depositing a mixed metal oxide coating is provided. A mixed metal oxide coating formed by the chemical vapor deposition process is also provided.

Abstract translation: 提供用于沉积混合金属氧化物涂层的化学气相沉积工艺。 还提供了通过化学气相沉积工艺形成的混合金属氧化物涂层。

公开(公告)号：WO2017031354A3

公开(公告)日：2017-05-04

申请号：PCT/US2016047622

申请日：2016-08-18

Applicant: SIO2 MEDICAL PRODUCTS INC

Inventor： WILLS MATTHEW ,  TAHA AHMAD ,  WEIKART CHRISTOPHER

IPC: C23C16/04 ,  A61J1/05 ,  A61L31/08 ,  C23C16/30 ,  C23C16/40 ,  C23C16/515

CPC classification number: C23C16/045 ,  A61L27/34 ,  A61L29/085 ,  A61L31/06 ,  C23C16/30 ,  C23C16/401 ,  C23C16/515 ,  C08L83/04

Abstract: Processing an evacuated blood sample collection tube or other vessel by plasma enhanced chemical vapor deposition to apply a tie coating or layer (289), a barrier coating or layer (288), and optionally one or more additional coatings or layers. The tie coating or layer of SiOxCy is applied under partial vacuum and, while maintaining the partial vacuum unbroken in the lumen, the barrier coating or layer is applied. Then optionally, while maintaining the partial vacuum unbroken in the lumen, a pH protective coating or layer of SiOxCy can be applied. As a result of this processing, a coated vessel is produced having a lower gas permeation rate constant into the lumen than a corresponding vessel made by the same process except breaking the partial vacuum in the lumen between applying the tie coating or layer and applying the barrier coating or layer. Retention features are also described for keeping the vessels stoppered during exposure to reduced ambient pressure.

Abstract translation: 通过等离子体增强化学气相沉积处理抽空的血液样本收集管或其他容器以施加连接涂层或层（289），阻挡涂层或层（288）以及任选地一个或多个另外的涂层或层。 在部分真空下施加粘结涂层或SiOxCy层，并且在保持部分真空在管腔中不破损的同时，施加阻隔涂层或涂层。 然后可选地，在保持部分真空在管腔内不破裂的同时，可以施加pH保护涂层或SiOxCy层。 作为该处理的结果，产生具有比通过相同过程制造的相应容器更低的气体渗透速率进入管腔的涂覆容器，除了在施加粘结涂层或涂层和施加阻挡层之间破坏内腔中的局部真空之外 涂层或层。 还描述了保持特征以在暴露于降低的环境压力期间保持容器塞住。

公开(公告)号：WO2017031354A2

公开(公告)日：2017-02-23

申请号：PCT/US2016/047622

申请日：2016-08-18

Applicant: SIO2 MEDICAL PRODUCTS, INC.

Inventor： WILLS, Matthew ,  TAHA, Ahmad ,  WEIKART, Christopher

IPC: C23C16/04 ,  C23C16/40 ,  C23C16/30 ,  C23C16/515 ,  A61L31/08 ,  A61J1/05

CPC classification number: C23C16/045 ,  A61L27/34 ,  A61L29/085 ,  A61L31/06 ,  C23C16/30 ,  C23C16/401 ,  C23C16/515 ,  C08L83/04

Abstract: Processing an evacuated blood sample collection tube or other vessel by plasma enhanced chemical vapor deposition to apply a tie coating or layer (289), a barrier coating or layer (288), and optionally one or more additional coatings or layers. The tie coating or layer of SiOxCy is applied under partial vacuum and, while maintaining the partial vacuum unbroken in the lumen, the barrier coating or layer is applied. Then optionally, while maintaining the partial vacuum unbroken in the lumen, a pH protective coating or layer of SiOxCy can be applied. As a result of this processing, a coated vessel is produced having a lower gas permeation rate constant into the lumen than a corresponding vessel made by the same process except breaking the partial vacuum in the lumen between applying the tie coating or layer and applying the barrier coating or layer. Retention features are also described for keeping the vessels stoppered during exposure to reduced ambient pressure.

Abstract translation: 通过等离子体增强的化学气相沉积来处理抽空的血液样本收集管或其他容器以施加粘结涂层或层（289），阻挡涂层或层（288）以及任选的一个或多个另外的涂层或层。 在部分真空下施加SiO xCy的连接涂层或层，并且在保持腔内部分真空的同时，施加阻挡涂层或层。 然后任选地，在保持腔内部分真空的同时，可以施加pH保护涂层或SiOxCy层。 作为该处理的结果，生产具有比通过相同方法制造的对应容器更低的内腔气体渗透速率常数的涂覆容器，除了在施加粘结涂层或层之间打破管腔中的部分真空并施加屏障 涂层或层。 还描述了保持特征，用于在暴露于降低的环境压力期间保持容器塞住。

公开(公告)号：WO2016160991A1

公开(公告)日：2016-10-06

申请号：PCT/US2016/025011

申请日：2016-03-30

Applicant: L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE ,  AIR LIQUIDE ADVANCED MATERIALS, LLC ,  KERRIGAN, Sean ,  SANCHEZ, Antonio

Inventor： KERRIGAN, Sean ,  SANCHEZ, Antonio

IPC: C07F7/10 ,  C07F7/20 ,  H01L21/205 ,  C23C16/30 ,  C23C16/44

CPC classification number: C23C16/345 ,  C23C16/401 ,  C23C16/45525 ,  C23C16/50 ,  H01L21/0217 ,  H01L21/02222 ,  H01L21/02274 ,  H01L21/0228

Abstract: Si-containing film forming compositions are disclosed comprising Si-N containing precursors. Also disclosed are methods of synthesizing the same and methods of using the same for vapor deposition. In particular, a catalytic dehydrogenative coupling of carbosilanes with ammonia, amines and amidines produces the Si-N containing precursors.

Abstract translation: 公开了含Si的成膜组合物，其包含含Si-N的前体。 还公开了其合成方法和使用该方法进行气相沉积的方法。 特别地，碳硅烷与氨，胺和脒的催化脱氢偶联产生含Si-N的前体。

公开(公告)号：WO2016099850A8

公开(公告)日：2016-09-01

申请号：PCT/US2015063069

申请日：2015-12-01

Applicant: CPFILMS INC

Inventor： MATUS YURIY ,  STOESSEL CHRISTIAN HERMANN ,  MINASE GENICHI ,  BOMAN LEE CAMPBELL

IPC: G02B1/14

CPC classification number: C04B35/14 ,  C23C16/401 ,  C23C16/50 ,  G02B1/14

Abstract: An optical product for use in products such as window films and electronic displays is disclosed. The optical product includes a polymeric substrate and a hardcoat and has an abrasion resistance at the hardcoat surface as measured by haze increase of no more than 4.5% when measured according to Taber abrasion testing based on ASTM D1044 and a difference in water vapor transmission rate when compared to said polymeric substrate alone of no more than 5 grams/m2/day. These properties are achieved with a metal oxide hardcoat layer deposited as a thin film of a few microns by PECVD starting with suitable precusor gases.

Abstract translation: 公开了一种用于诸如窗膜和电子显示器的产品的光学产品。 光学产品包括聚合物基材和硬涂层，并且在硬涂层表面具有耐磨性，当通过根据ASTM D1044的泰伯磨耗测试测量时雾度增加不超过4.5％，并且当水蒸汽透过率差异 与单独的所述聚合物基质相比不超过5克/平方米/天。 这些性能是通过用合适的预反应气体从PECVD沉积为几微米薄膜的金属氧化物硬涂层来实现的。

公开(公告)号：WO2016105881A1

公开(公告)日：2016-06-30

申请号：PCT/US2015/063189

申请日：2015-12-01

Applicant: APPLIED MATERIALS, INC.

Inventor： LIANG, Jingmei ,  THADANI, Kiran V. ,  KACHIAN, Jessica S. ,  RAJAGOPALAN, Nagarajan

IPC: H01L21/205

CPC classification number: B81B3/00 ,  C23C16/401 ,  C23C16/452 ,  C23C16/45565 ,  C23C16/505 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/02315

Abstract: A method of reducing line bending and surface roughness of a substrate with pillars includes forming a treated surface by treating a pillar-containing substrate with a radical. The radical may be silicon-based, nitrogen-based or oxygen-based. The method may include forming a dielectric film over the treated surface by reacting an organosilicon precursor and an oxygen precursor. The method may include curing the dielectric film at a temperature of about 150C or less. A method of reducing line bending and surface roughness of a substrate with pillars includes forming a dielectric film over a pillar-containing substrate by reacting an organosilicon precursor, an oxygen precursor, and a radical precursor. The method may include curing the dielectric film at a temperature of about 150C or less. The radical precursor may be selected from the group consisting of nitrogen-based radical precursor, oxygen-based radical precursor, and silicon-based radical precursor.

Abstract translation: 减少具有柱的基体的线弯曲和表面粗糙度的方法包括通过用基团处理含柱基底来形成处理表面。 该基团可以是硅基，氮基或氧基。 该方法可以包括通过使有机硅前体和氧前体反应而在处理过的表面上形成电介质膜。 该方法可以包括在约150℃或更低的温度下固化电介质膜。 减少具有柱的基板的线弯曲和表面粗糙度的方法包括通过使有机硅前体，氧前体和自由基前体反应形成在含柱底物上的电介质膜。 该方法可以包括在约150℃或更低的温度下固化电介质膜。 自由基前体可以选自氮基自由基前体，氧基自由基前体和硅基自由基前体。

公开(公告)号：WO2016056605A1

公开(公告)日：2016-04-14

申请号：PCT/JP2015/078533

申请日：2015-10-07

Applicant: 住友化学株式会社

Inventor： 牧寺　雅巳 ,  山下　恭弘 ,  野殿　光紀 ,  岡本　敏

IPC: B32B37/20 ,  B32B7/10 ,  C23C16/42 ,  C23C16/54 ,  H01L51/50 ,  H05B33/04

CPC classification number: B32B37/20 ,  B32B7/10 ,  B32B7/12 ,  B32B37/12 ,  B32B37/203 ,  B32B2307/54 ,  B32B2457/20 ,  C23C16/02 ,  C23C16/401 ,  C23C16/402 ,  C23C16/45523 ,  C23C16/50 ,  C23C16/545 ,  H01L51/0024 ,  H01L51/50 ,  H01L51/5253

Abstract: 　積層フィルムと、接着層と、を有する積層体の製造方法であって、この製造方法は、この積層フィルムの一方の面にこの接着層を形成する工程を含み、この積層フィルムは、少なくとも、基材と、少なくとも珪素を含む薄膜層とが積層した積層フィルムであり、この接着層を形成する工程は、この積層フィルムが帯状に連続した積層フィルム原反を、長尺方向に搬送しながら、前記積層フィルム原反に対し、この長尺方向に、単位断面積当たり０．５Ｎ／ｍｍ ２ 以上５０Ｎ／ｍｍ ２ 未満の張力を加えた状態で、この積層フィルム原反におけるこの薄膜層が積層されている面に、この接着層を形成することを含む、積層体の製造方法。

Abstract translation: 一种层叠体的制造方法，其包括层压膜和粘合剂层，所述制造方法包括在所述层压膜的一个表面上形成所述粘合剂层的步骤，所述层压膜为至少包含基材和 至少含有硅的薄膜层，其中形成粘合剂层的步骤包括在层压薄膜层的层叠膜原料的表面上形成粘合剂层，其中层压薄膜原料 是连续带状的层压膜，沿长度方向输送，同时相对于层叠膜原料在纵向方向施加单位面积的0.5N / mm 2〜50N / mm 2的拉伸强度 材料。