公开(公告)号：WO2010056990A1

公开(公告)日：2010-05-20

申请号：PCT/US2009/064381

申请日：2009-11-13

申请人： THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORK ,  IM, James, S.

发明人： IM, James, S.

IPC分类号： H01L21/02

CPC分类号： H01L21/02686 ,  H01L21/02532 ,  H01L21/02678 ,  H01L27/1285 ,  H01L27/1296

摘要： Crystallization of thin films using pulsed irradiation The method includes continuously irradiating a film having an x-axis and a y-axis, in a first scan in the x-direction of the film with a plurality of line beam laser pulses to form a first set of irradiated regions, translating the film a distance in the y-direction of the film, wherein the distance is less than the length of the line beam, and continuously irradiating the film in a second scan in the negative x-direction of the film with a sequence of line beam laser pulses to form a second set of irradiated regions, wherein each of the second set of irradiated regions overlaps with a portion of the first set of irradiated regions, and wherein each of the first and the second set of irradiated regions upon cooling forms one or more crystallized regions.

摘要翻译： 使用脉冲照射使薄膜结晶化该方法包括：以多条线束激光脉冲在膜的x方向的第一次扫描中连续照射具有x轴和y轴的膜，以形成第一组 的照射区域，使膜在膜的y方向上的距离平移，其中距离小于线束的长度，并且在膜的负x方向上以第二扫描方式连续地照射膜， 一系列线束激光脉冲以形成第二组照射区域，其中第二组照射区域中的每一个与第一组照射区域的一部分重叠，并且其中第一组和第二组照射区域中的每一个 冷却时形成一个或多个结晶区域。

公开(公告)号：WO2009039482A1

公开(公告)日：2009-03-26

申请号：PCT/US2008/077199

申请日：2008-09-22

申请人： THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORK ,  IM, James, S. ,  CHUNG, Ui-Jin

发明人： IM, James, S. ,  CHUNG, Ui-Jin

IPC分类号： H01L31/036

CPC分类号： H01L33/16 ,  H01L27/12 ,  H01L27/1281

摘要： Collections of laterally crystallized semiconductor islands for use in thin film transistors and systems and methods for making same are described. A display device includes a plurality of thin film transistors (TFTs) on a substrate, such that the TFTs are spaced apart from each other and each include a channel region that has a crystalline microstructure and a direction along which a channel current flows. The channel region of each of the TFTs contains a crystallographic grain that spans the length of that channel region along its channel direction. Each crystallographic grain in the channel region of each of the TFTs is physically disconnected from and crystallographically uncorrelated with each crystallographic grain in the channel region of each adjacent TFT.

摘要翻译： 描述了用于薄膜晶体管和系统的横向结晶半导体岛的集合及其制造方法。 显示装置包括在基板上的多个薄膜晶体管（TFT），使得TFT彼此间隔开，并且每个包括具有结晶微结构的沟道区域和沟道电流流过的方向。 每个TFT的沟道区域包含沿其沟道方向跨越该沟道区的长度的晶体晶粒。 每个TFT的沟道区域中的每个晶体晶粒与每个相邻TFT的沟道区域中的每个晶体晶粒物理断开并在晶体学上不相关。

公开(公告)号：WO2005029551A2

公开(公告)日：2005-03-31

申请号：PCT/US2004/030330

申请日：2004-09-16

申请人： THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORK ,  IM, James, S. ,  VAN DER WILT, Paul, Christiaan

发明人： IM, James, S. ,  VAN DER WILT, Paul, Christiaan

IPC分类号： H01L

CPC分类号： H01L21/02686 ,  C30B13/24 ,  C30B35/00 ,  G21K5/02 ,  G21K5/10 ,  H01L21/02678 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04

摘要： Process and system for processing a thin film sample, as well as at least one portion of the thin film structure are provided. Irradiation beam pulses can be shaped to define at least one line-type beam pulse, which includes a leading portion, a top portion and a trailing portion, in which at least one part has an intensity sufficient to at least partially melt a film sample. Irradiating a first portion of the film sample to at least partially melt the first portion, and allowing the first portion to resolidify and crystallize to form an approximately uniform area therein. After the irradiation of the first portion of the film sample, irradiating a second portion using a second one of the line-type beam pulses to at least partially melt the second portion, and allowing the second portion to resolidify and crystallize to form an approximately uniform area therein.. A section of the first portion impacted by the top portion of the first one of the line-type beam pulses is prevented from being irradiated by trailing portion of the second one of the line-type beam pulses.

摘要翻译： 提供了用于处理薄膜样品的方法和系统，以及薄膜结构的至少一部分。 辐射束脉冲可以被成形为限定至少一个线型束脉冲，其包括前导部分，顶部部分和尾部部分，其中至少一个部分具有足以至少部分地熔化膜样品的强度。 辐射薄膜样品的第一部分以至少部分地熔化第一部分，并允许第一部分重新凝固并结晶以在其中形成大致均匀的区域。 在照射第一部分薄膜样品之后，使用第二种线型束脉冲照射第二部分以至少部分地熔化第二部分，并允许第二部分重新凝固并结晶以形成近似均匀的 第一部分的第一部分的第一部分的一部分被第一种线型光束脉冲的顶部部分所防止被第二种线型光束脉冲的尾部照射。

公开(公告)号：WO2003018882A1

公开(公告)日：2003-03-06

申请号：PCT/US2002/027246

申请日：2002-08-27

申请人： THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORK ,  IM, James, S. ,  VAN DER WILT, Paul, Christiaan

发明人： IM, James, S. ,  VAN DER WILT, Paul, Christiaan

IPC分类号： C30B13/00

CPC分类号： C30B29/06 ,  C30B13/24

摘要： Methods of making a polycrystalline silicon thin-film transistor having a uniform microstructure. One exemplary method requires receiving a polycrystalline silicon thin film having a grain structure which is periodic in at least a first direction, and placing at least portions (410, 420) of one or more thin-film transistors on the received film such that they are tilted relative to the periodic structure of the thin film.

摘要翻译： 制造具有均匀微观结构的多晶硅薄膜晶体管的方法。 一种示例性方法需要接收具有在至少第一方向上周期性的晶粒结构的多晶硅薄膜，并且在接收的薄膜上放置一个或多个薄膜晶体管的至少一部分（410,420），使得它们是 相对于薄膜的周期性结构倾斜。

公开(公告)号：WO2013172965A1

公开(公告)日：2013-11-21

申请号：PCT/US2013/031732

申请日：2013-03-14

申请人： THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORK

发明人： IM, James, S.

IPC分类号： C30B13/24

CPC分类号： C30B13/24 ,  H01L21/02532 ,  H01L21/02686 ,  H01L21/02691

摘要： The present disclosure relates to a new generation of laser-crystallization approaches that can crystallize Si films for large displays at drastically increased effective crystallization rates. The particular scheme presented in this aspect of the disclosure is referred to as the advanced excimer-laser · annealing (AELA) method, and it can be readily configured for manufacturing large OLED TVs using various available and proven technical components. As in ELA, it is mostly a partial-/near-complete- melting-regime-based crystallization approach that can, however, eventually achieve greater than one order of magnitude increase in the effective rate of crystallization than that of the conventional ELA technique utilizing the same laser source.

摘要翻译： 本公开涉及新一代激光结晶方法，其能够以大幅提高的有效结晶速率使大型显示器的Si膜结晶。 在本公开的该方面中呈现的特定方案被称为高级准分子激光退火（AELA）方法，并且可以容易地配置用于使用各种可用且经过验证的技术部件来制造大型OLED电视。 如在ELA中，它主要是部分/接近完全熔融状态的结晶方法，然而，其最终可以实现有效结晶速率比使用常规ELA技术的结晶度提高一个数量级以上 相同的激光源。

公开(公告)号：WO2009067687A1

公开(公告)日：2009-05-28

申请号：PCT/US2008/084387

申请日：2008-11-21

申请人： THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORK ,  IM, James, S.

发明人： IM, James, S.

IPC分类号： H01L29/00 ,  H01L31/036

CPC分类号： H01L21/3221 ,  C30B13/24 ,  C30B29/06 ,  H01L21/02532 ,  H01L21/02609 ,  H01L21/02686 ,  H01L31/0236 ,  H01L31/1804 ,  H01L31/1872 ,  Y02E10/547 ,  Y02P70/521

摘要： The disclosed subject matter relates to the use of laser crystallization of thin films to create epitaxially textured crystalline thick films. In one or more embodiments, a method for preparing a thick crystalline film includes providing a film for crystallization on a substrate, wherein at least a portion of the substrate is substantially transparent to laser irradiation, said film including a seed layer having a predominant surface crystallographic orientation; and a top layer disposed above the seed layer; irradiating the film from the back side of the substrate using a pulsed laser to melt a first portion of the top layer at an interface with the seed layer while a second portion of the top layer remains solid; and re-solidifying the first portion of the top layer to form a crystalline laser epitaxial with the seed layer thereby releasing heat to melt an adjacent portion of the top layer.

摘要翻译： 所公开的主题涉及使用薄膜的激光结晶来产生外延纹理的结晶厚膜。 在一个或多个实施方案中，制备厚晶体膜的方法包括在基底上提供用于结晶的膜，其中至少一部分基底对激光照射基本上是透明的，所述膜包括具有主要表面结晶学的种子层 方向; 以及设置在种子层上方的顶层; 使用脉冲激光从所述基板的背面照射所述膜，以在所述顶层的第二部分保持固体的同时在与所述种子层的界面处熔化所述顶层的第一部分; 并重新固化顶层的第一部分以形成用籽晶层外延的晶体激光，从而释放热量以熔化顶层的相邻部分。

公开(公告)号：WO2006107926A3

公开(公告)日：2006-10-12

申请号：PCT/US2006/012435

申请日：2006-04-04

申请人： THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORK ,  IM, James, S. ,  VAN DER WILT, Paul, C.

发明人： IM, James, S. ,  VAN DER WILT, Paul, C.

IPC分类号： C30B13/00

摘要： Herein is provided an improved method of sequential lateral solidification of crystalline semiconductor film. The improvement consists of using a pulse laser to create two distinct zones of molten crystals. The laser creates these zones by laterally and in stepwise fashion moving the substrate film beneath it. The crystals form predetermined patterns as they cool. A computer program in memory controls the movement of the substrate film.

公开(公告)号：WO2004017379A2

公开(公告)日：2004-02-26

申请号：PCT/US2003/025946

申请日：2003-08-19

申请人： THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORK ,  IM, James, S.

发明人： IM, James, S.

IPC分类号： H01L

CPC分类号： H01L21/02686 ,  H01L21/02532 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78675 ,  Y10T117/1024 ,  Y10T117/1076

摘要： A process and system for processing a thin film sample (e.g., a semiconductor thin film), as well as the thin film structure are provided. In particular, a beam generator can be controlled to emit at least one beam pulse. With this beam pulse, at least one portion of the film sample is irradiated with sufficient intensity to fully melt such section of the sample throughout its thickness, and the beam pulse having a predetermined shape. This portion of the film sample is allowed to re­solidify, and the re-solidified at least one portion is composed of a first area and a second area. Upon the re-solidification thereof, the first area includes large grains, and the second area has a region formed through nucleation. The first area surrounds the second area and has a grain structure which is different from a grain structure of the second area. The second area is configured to facilitate thereon an active region of an electronic device.

摘要翻译： 提供了用于处理薄膜样品（例如半导体薄膜）的工艺和系统以及薄膜结构。 特别地，可以控制光束发生器发射至少一个光束脉冲。 利用该光束脉冲，以足够的强度照射膜样品的至少一部分，以在样品的整个厚度上完全熔化这样的部分，并且束脉冲具有预定的形状。 允许该薄膜样品的该部分重新固化，并且再固化的至少一部分由第一区域和第二区域组成。 在其再凝固时，第一区域包括大颗粒，第二区域具有通过成核形成的区域。 第一区域围绕第二区域并且具有与第二区域的颗粒结构不同的颗粒结构。 第二区域被配置为便于其上电子设备的有源区域。

公开(公告)号：WO2003084688A2

公开(公告)日：2003-10-16

申请号：PCT/US2003/009861

申请日：2003-04-01

申请人： THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORK ,  IM, James, S. ,  CHOI, Jae, Beom

发明人： IM, James, S. ,  CHOI, Jae, Beom

IPC分类号： B21C

CPC分类号： H01L21/76867 ,  B23K26/066 ,  C30B13/24 ,  C30B29/02 ,  H01L21/76838

摘要： Method and system for generating a metal thin film with a uniform crystalline orientation and a controlled crystalline microstructure are provided. For example, a metal layer is irradiated with a pulsed laser to completely melt the film throughout its entire thickness. The metal layer can then resolidify to form grains with a substantially uniform orientation. The resolidified metal layer can be irradiated with a sequential lateral solidification technique to modify the crystalline microstructure ( e.g. , create larger grains, single-crystal regions, grain boundary controlled microstructures, etc.) The metal layer can be irradiated by patterning a beam using a mask which includes a first region capable of attenuating the pulsed laser and a second region allowing complete irradiation of sections of the thin film being impinged by the masked laser beam. An inverse dot-patterned mask can be used, the microstructure that may have substantially the same as the geometric pattern as that of the dots of the mask.

摘要翻译： 提供了用于产生具有均匀结晶取向和受控结晶微结构的金属薄膜的方法和系统。 例如，用脉冲激光照射金属层，以使其在整个厚度上完全熔化。 然后可以将金属层重新固化以形成具有基本均匀取向的晶粒。 可以用连续的侧向凝固技术照射再固化的金属层，以改变结晶微结构（例如，产生更大的晶粒，单晶区域，晶界控制的微观结构等）。金属层可以通过使用 掩模，其包括能够衰减所述脉冲激光的第一区域和允许被所述被掩模的激光束照射所述薄膜的部分的完全照射的第二区域。 可以使用反点阵图案掩模，该微结构可以具有与掩模点的几何图案基本相同的微结构。

公开(公告)号：WO2019075454A1

公开(公告)日：2019-04-18

申请号：PCT/US2018/055846

申请日：2018-10-15

申请人： THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORK

发明人： IM, James, S. ,  PAN, Wenkai ,  SONG, Ruobing ,  CHOI, Insung ,  WONG, Vernon

IPC分类号： B23K26/066 ,  C30B13/24 ,  C30B35/00

摘要： Method and systems for crystallizing a thin film provide an optics system configured to produce a laser spot beam directed towards the thin film and truncate the laser spot beam before the laser spot beam comes into contact with the thin film. The truncated laser spot beam is continually translated in a first direction while irradiating an amorphous silicon area of the thin film to generate a molten zone in the irradiated amorphous silicon area, where the thin film cools and solidifies to form crystal grains.