公开(公告)号：WO2017013445A1

公开(公告)日：2017-01-26

申请号：PCT/GB2016/052244

申请日：2016-07-22

Applicant: THE UNIVERSITY OF WARWICK

Inventor： MYRONOV, Maksym ,  COLSTON, Gerard ,  RHEAD, Stephen

IPC: C30B25/02 ,  C30B25/10 ,  C23C16/32 ,  C30B29/36

CPC classification number: C30B29/36 ,  C23C16/325 ,  C30B25/02 ,  C30B25/10

Abstract: A method of growing epitaxial 3C-Si C on single-crystal silicon is disclosed. The method comprises providing a single-crystal silicon substrate (2) in a cold-wall chemical vapour deposition reactor (7), heating the substrate to a temperature equal to or greater than 700 °C and equal to or less than 1200 °C, introducing a gas mixture (41) into the reactor while the substrate is at the temperature, the gas mixture comprising a silicon source precursor (16), a carbon source precursor (18) and a carrier gas (24) so as to deposit an epitaxial layer (4; Fig. 1) of 3C-SiC on the single-crystal silicon.

Abstract translation: 公开了在单晶硅上生长外延3C-Si C的方法。 该方法包括在冷壁化学气相沉积反应器（7）中提供单晶硅衬底（2），将衬底加热到​​等于或大于700℃且等于或小于1200℃的温度， 在衬底处于该温度的同时将气体混合物（41）引入反应器，所述气体混合物包含硅源前体（16），碳源前体（18）和载气（24），以沉积外延 3C-SiC在单晶硅上的层（4;图1）。

公开(公告)号：WO2017055820A1

公开(公告)日：2017-04-06

申请号：PCT/GB2016/052992

申请日：2016-09-26

Applicant: THE UNIVERSITY OF WARWICK

Inventor： MYRONOV, Maksym ,  COLSTON, Gerard ,  RHEAD, Stephen

IPC: B81C1/00 ,  G01L9/00

CPC classification number: B81C1/00158 ,  B81B2201/0264 ,  G01L9/0044 ,  G01L9/0073

Abstract: A sensor is disclosed. The sensor comprises a substrate (2) and a layer (6) of monocrystalline 3C-SiC supported by the substrate. The substrate may consist of silicon SiC. The monocrystalline 3C-SiC layer may comprise at least one fixed region (7), for example which is directly supported by the substrate, and at least one suspended region (9).

Abstract translation: 公开了一种传感器。 该传感器包括基板（2）和由基板支撑的单晶3C-SiC层（6）。 衬底可以由硅SiC组成。 单晶3C-SiC层可以包括至少一个固定区域（7），例如由衬底直接支撑的固定区域（7）和至少一个悬浮区域（9）。

公开(公告)号：WO2018078385A1

公开(公告)日：2018-05-03

申请号：PCT/GB2017/053246

申请日：2017-10-27

Applicant: THE UNIVERSITY OF WARWICK

Inventor： MYRONOV, Maksym ,  COLSTON, Gerard

IPC: H01L21/20

Abstract: A coated wafer is disclosed. The coated wafer comprises a wafer, such as a silicon or silicon-on-insulator wafer, having a principal surface and a reverse surface comprising a material or respective materials having a cubic crystal structure, such as a diamond or zinc blend crystal structure, and a melting temperature equ al to or greater than 1,250°C. The coated wafer further comprises a layer of 3C-SiC having a thickness of at least 1 nm disposed on the reverse surface or on a dielectric layer supported by the reverse surface.

Abstract translation: 公开了一种涂布的晶片。 经涂覆的晶片包括晶片，例如硅或绝缘体上硅晶片，其具有主表面和相反表面，所述主表面和背面包含具有立方晶体结构的材料或相应材料，例如金刚石或锌混合晶体结构，以及 熔化温度等于或大于1250℃。 经涂覆的晶片还包括设置在反面或由反面支撑的电介质层上的厚度至少为1nm的3C-SiC层。

公开(公告)号：WO2012153112A2

公开(公告)日：2012-11-15

申请号：PCT/GB2012/050980

申请日：2012-05-04

Applicant: THE UNIVERSITY OF WARWICK ,  SHAH, Vishal Ajit ,  MYRONOV, Maksym

Inventor： SHAH, Vishal Ajit ,  MYRONOV, Maksym

IPC: B81C1/00

CPC classification number: B81C1/00158 ,  B81C2201/017 ,  B81C2201/0177 ,  H01L21/3081

Abstract: A semiconductor structure comprises a frame (24) provided by a monocrystalline substrate comprising a first semiconductor material and having a window passing through the substrate between first and second opposite surfaces of the substrate; and a monocrystalline membrane (4) over the window provided by a layer supported directly on the first surface of the substrate, the membrane comprising a second, different semiconductor material which is under tensile strain.

Abstract translation: 半导体结构包括由单晶衬底提供的框架（24），所述单晶衬底包括第一半导体材料并且具有穿过所述衬底的窗口，所述窗口在所述衬底的第一和第二相对表面之间; 以及由直接支撑在所述基板的第一表面上的层提供的窗口上的单晶膜（4），所述膜包括处于拉伸应变的第二不同的半导体材料。