公开(公告)号：WO2012080008A3

公开(公告)日：2012-08-09

申请号：PCT/EP2011071654

申请日：2011-12-02

Applicant: ZEISS CARL SMS GMBH ,  ZEISS CARL SMS LTD ,  BEYER DIRK ,  DMITRIEV VLADIMIR ,  SHARONI OFIR ,  WERTSMAN NADAV

Inventor： BEYER DIRK ,  DMITRIEV VLADIMIR ,  SHARONI OFIR ,  WERTSMAN NADAV

IPC: G03F1/00 ,  G03F1/72 ,  G03F1/84 ,  G03F7/20

CPC classification number: G03F1/72 ,  G03F1/84 ,  G03F7/70466 ,  G03F7/70625 ,  G03F7/70633

Abstract: The invention relates to a method for correcting at least one error on wafers processed by at least one photolithographic mask, the method comprises:(a) measuring the at least one error on a wafer at a wafer processing site,and (b) modifying the at least one photolithographic mask by introducing at least one arrangement of local persistent modifications in the at least one photolithographic mask.

Abstract translation: 本发明涉及一种用于校正由至少一个光刻掩模处理的晶片上的至少一个误差的方法，所述方法包括：（a）在晶片加工位置测量晶片上的至少一个误差，以及（b）修改 至少一个光刻掩模，通过在所述至少一个光刻掩模中引入局部持续修饰的至少一种布置。

公开(公告)号：WO2012046233A2

公开(公告)日：2012-04-12

申请号：PCT/IL2011000779

申请日：2011-10-05

Applicant: ZEISS CARL SMS LTD ,  DMITRIEV VLADIMIR ,  SHARONI OFIR

Inventor： DMITRIEV VLADIMIR ,  SHARONI OFIR

IPC: G03F7/20

CPC classification number: G06F17/5081 ,  G03F7/70508 ,  G03F7/70625

Abstract: Data associated with a substrate can be processed by measuring a property of at least a first type of specific features and a second type of specific features on a substrate. The first type of specific features is measured at a first plurality of locations on the substrate to generate a first group of measured values, and the second type of specific features is measured at a second plurality of locations on the substrate to generate a second group of measured values, in which the first and second groups of measured values are influenced by critical dimension variations of the substrate. A combined measurement function is defined based on combining the at least first and second groups of measured values. At least one group of measured values is transformed prior to combining with another group or other groups of measured values, in which the transformation is defined by a group of coefficients. Variations in the critical dimension across the substrate are determined based on the combined measurement function and a predetermined relationship between the measured values and the critical dimension.

Abstract translation: 可以通过测量衬底上的至少第一类型的特定特征和第二类型的特定特征的性质来处理与衬底相关联的数据。 在衬底上的第一多个位置处测量第一类型的特定特征以生成第一组测量值，并且在衬底上的第二多个位置处测量第二类型的特定特征以生成第二组 测量值，其中第一和第二组测量值受衬底临界尺寸变化的影响。 基于组合测量值的至少第一组和第二组来定义组合测量功能。 至少一组测量值在与另一组或其他组测量值组合之前进行变换，其中变换由一组系数定义。 基于组合的测量函数和测量值与临界尺寸之间的预定关系来确定衬底上的临界尺寸的变化。

公开(公告)号：WO2009007977A2

公开(公告)日：2009-01-15

申请号：PCT/IL2008000960

申请日：2008-07-10

Applicant: PIXER TECHNOLOGY LTD ,  BEN-ZVI GUY ,  ZAIT EITAN ,  DMITRIEV VLADIMIR J ,  LABOVITZ STEVEN M ,  GRAITZER EREZ ,  SHARONI OFIR

Inventor： BEN-ZVI GUY ,  ZAIT EITAN ,  DMITRIEV VLADIMIR J ,  LABOVITZ STEVEN M ,  GRAITZER EREZ ,  SHARONI OFIR

CPC classification number: G03F1/84 ,  G01N21/33 ,  G01N21/59 ,  G01N21/958 ,  G01N2021/95676

Abstract: Apparatus and method for transmittance mapping of an object which is at least partially transparent to deep ultraviolet radiation. The method comprises directing a wide-band deep ultraviolet radiation so as to illuminate different areas of an array of successive areas of the object; using an optical detector positioned on an opposite side of the object with respect to the radiation source detecting the wide-band deep ultraviolet radiation that emerges from the object; and processing signals from the optical detector to determine the transmittance of the radiation through the different areas of the array of successive areas of the object.

Abstract translation: 对于深紫外线辐射至少部分透明的物体的透射率测绘的装置和方法。 该方法包括引导宽带深紫外线辐射以照射物体的连续区域阵列的不同区域; 使用相对于所述辐射源位于所述物体的相对侧上的光学检测器来检测从所述物体出射的宽带深紫外线辐射; 以及处理来自光学检测器的信号，以确定通过对象的连续区域阵列的不同区域的辐射的透射率。