Abstract:
In a semiconductor packaging structure (100), a die (102) includes a bond pad (126) and a first metal layer structure (106, 107) disposed on the die (102). The first metal layer structure (106, 107) has a first width (109, 128). In the first metal layer structure, a first metal layer (107) is electrically coupled to the bond pad (124). The semiconductor packaging structure (100) also includes a first photosensitive material (104) around sides of the first metal layer structure (106, 107), and a second metal layer structure (112, 114) disposed over the first metal layer structure (106, 107) and over a portion of the first photosensitive material (104). The second metal layer structure (112, 114) is electrically coupled to the first metal layer structure (106, 107). The second metal layer structure (112, 114) has a second width (119), which is greater than the first width (109, 128). Also, the semiconductor packaging structure (100) includes a second photosensitive material (110) around sides of the second metal layer structure (112, 114).
Abstract:
In described examples, a radio communications device (300) includes a real time clock (RTC) (304) configured to run even during sleep for receiving (from a coordinator node (CN) in an asynchronous channel hopping WPAN) an asynchronous hopping sequence (AHS) frame that includes the CN's hopping sequence. A CPU (301) implements a stored sleepy device operation in asynchronous channel hopping networks algorithm (303a). The algorithm is for: determining a time stamp for the AHS frame and the CN's initial timing position within the hopping sequence; storing the time stamp; going to sleep; and upon waking up, changing a frequency band of its receive (Rx) channel to an updated fixed channel. A data request command frame is transmitted by the device on the CN's listening channel that is calculated from the CN's hopping sequence, time stamp, CN's initial timing position and current time, and the device receives an ACK frame transmitted by the CN at the updated fixed channel of Rx operation.
Abstract:
An apparatus (100) includes processor cores (130) and computer-readable mediums (150) storing machine instructions for the processor cores. When executing the machine instructions, the processor cores obtain received signals for transmitted chirps from a radar sensor circuit (110). Each transmitted chirp includes an A chirp segment, a time gap, and a B chirp segment, respectively. The processor cores sample the received signals to obtain sampled data matrices Ml (A) for the A chirp segments and M1(B) for the B chirp segments. The processor cores perform a first Fourier transform (FT) on each column of M1(A) and M1(B) to obtain velocity matrices M2(A) and M2(B), respectively. The processor cores apply a phase compensation factor to M2(B) to obtain a phase corrected velocity matrix M2(B'), and concatenate M2(A) and M2(B') to obtain an aggregate velocity matrix M2(A&B'). The processor cores perform a second FT on each row of M2(A&B') to obtain a range and velocity matrix M3(A&B').
Abstract:
A described example (200) includes: a MEMS component (212) on a device side surface of a first semiconductor substrate (210); a second semiconductor substrate (221) bonded to the device side surface of the first semiconductor substrate by a first seal (223) patterned to form sidewalls that surround the MEMS component; a third semiconductor substrate (231) having a second seal (229) extending from a surface and bonded to the backside surface of the first semiconductor substrate (210) by the second seal, the second seal forming sidewalls of a gap (226) beneath the MEMS component (212). A trench (227) extends through the first semiconductor substrate and at least partially surrounds the MEMS component. The third semiconductor substrate (231) is mounted on a package substrate (239). A bond wire or ribbon bond (243) couples a bond pad (245) to a conductive lead (241) on the package substrate (239); and mold compound (203) covers the MEMS component, the bond wire, and a portion of the package substrate.
Abstract:
A method (700) includes receiving, by a first device in a stack, a command from a controller (702). The stack includes multiple devices. The method also includes dissipating, by the first device, an amount of power responsive to a difference between a longest response time for the devices to respond to the command, and a device response time for the first device to respond to the command (704).
Abstract:
One example includes a testing method that includes connecting a capacitor having a first capacitance to an output terminal of an integrated circuit (IC) (604). The method can also include generating pulse signal responsive to an enable signal provided at least one input terminal of the IC (606) and providing a drive signal to the output terminal to cause a linearly increasing voltage across the capacitor responsive to the pulse signal. The method can also include measuring a no-load delay. The method can also include measuring the linearly increasing voltage (610) at the output terminal responsive to the drive signal. The method can also include determining a first capacitance charge time (616) for the capacitor responsive to the linearly increasing voltage reaching a threshold and determining a second capacitance charge delay for a second capacitance (620) based on the first capacitance charge time and the no-load delay.
Abstract:
In one example, an apparatus comprises an interface circuit configured to intermittently transmit an output serial data frame, the output serial data frame including a status phase and a data phase followed by at least one fault bit (592), wherein the at least one fault bit indicates whether a fault is detected during sending of the output serial data frame.
Abstract:
In described examples, a boost converter 400 includes an inductor 206, a voltage input 202, a current regulator 212, an intermediate node 214, a transistor 220, and a regulation circuit 424. The inductor 206 has first and second terminals. The voltage input 202 provides an input voltage, and is coupled to the first inductor 206 terminal. The current regulator 212 has current regulator 212 input and output. The current regulator 212 input is coupled to the second inductor 206 terminal. The current regulator 212 allows current to flow from the current regulator 212 input to the current regulator 212 output, and not vice versa. The intermediate node 214 provides a node voltage. The transistor 220 includes a source, a drain, and a gate. The drain is coupled to the current regulator 212 output via the intermediate node 214. The regulation circuit 424 includes a first regulation input 410 coupled to receive the input voltage, a second regulation input coupled to the intermediate node 214, and a regulation output 422 coupled to the gate.
Abstract:
Described embodiments include a circuit for limiting power converter output ripple (400). A first transistor (QI) has a first transistor current terminal receiving an input voltage, and a second transistor current terminal coupled to a first capacitor (CFLY1). A second transistor (Q4) has a third transistor current terminal coupled to the first capacitor, and a fourth transistor current terminal is coupled to a second capacitor (CFLY2). A third transistor (Q7) has a fifth transistor current terminal coupled to the second capacitor, and a sixth transistor terminal coupled to a filter input (LO, CO). A fourth transistor (Q2) has a seventh transistor current terminal coupled to the second transistor current terminal, and an eighth transistor current terminal coupled to the sixth transistor current terminal. A fifth transistor (Q5) has a ninth transistor current terminal coupled to the fourth transistor current terminal, and a tenth transistor current terminal coupled to the sixth transistor current terminal.
Abstract:
A system (200) includes a feedforward path coupled to a signal input (202). The system (200) also includes a speaker (216) coupled to the feedforward path. The system (200) includes a back electromotive force (BEMF) extractor (226) coupled to the speaker (216), where the BEMF extractor (226) has a first input, a second input, and an output. The BEMF extractor (226) includes a first summing point (228) coupled to the first input. The BEMF extractor (226) includes a resistor amplifier (230) coupled to the second input and the first summing point (228). The BEMF extractor (226) includes a high pass filter (232) coupled to the second input and to an inductor amplifier (234). The BEMF extractor (226) also includes a low pass filter (236) coupled to the first summing point (228). The BEMF extractor (226) includes a second summing point (238) coupled to the low pass filter (236), the inductor amplifier (234), and the output.