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    A METHOD AND SYSTEM FOR POLISHING SEMICONDUCTOR WAFERS
    2.
    发明申请
    A METHOD AND SYSTEM FOR POLISHING SEMICONDUCTOR WAFERS 审中-公开
    一种用于抛光半导体波形的方法和系统

    公开(公告)号：WO01027990A1

    公开(公告)日：2001-04-19

    申请号：PCT/US2000/024945

    申请日：2000-09-12

    IPC: B24B37/04 ,  B24B49/03 ,  G05B19/416 ,  H01L21/304 ,  H01L21/66 ,  G05B19/418 ,  G05B21/02

    CPC classification number: B24B37/013 ,  B24B37/042 ,  B24B49/03 ,  G05B19/4163 ,  G05B2219/37398 ,  G05B2219/37602 ,  G05B2219/45232 ,  G05B2219/49085

    Abstract: A method for optimizing CMP (chemical mechanical polishing) processing of semiconductor wafers on a CMP machine. The optimization method includes the steps of polishing a test series of semiconductor wafers on a CMP machine. During the CMP processing, a film thickness is measured at a first point proximate to the center of each respective wafer using a film thickness detector coupled to the machine. A film thickness at a second point proximate to the outside edge of the respective wafers is also measured. Based upon the in-process film thickness measurements at the first point and the second points, the optimization process determines a polishing profile describing a removal rate and a removal uniformity with respect to a set of process variables. The process variables include different CMP machine settings for the polishing process, such as the amount of down force applied to the wafer. The polishing profile is subsequently used to polish production wafers accordingly. For each production wafer, their respective removal rate and removal uniformity is determined by measuring a film thickness at the center of each production wafer and a film thickness at the outside edge of each production wafer using the film thickness detector. Based upon these measurements, the set of process variables is adjusted in accordance the removal rate and the removal uniformity measurements to optimize the CMP process for the production wafer as each respective wafer is being polished.

    Abstract translation: 一种用于优化CMP机器上的半导体晶片的CMP（化学机械抛光）处理的方法。 优化方法包括在CMP机器上抛光半导体晶片的测试系列的步骤。 在CMP处理期间，使用耦合到机器的膜厚检测器在靠近每个相应晶片的中心的第一点处测量膜厚度。 还测量了在相应晶片的外边缘附近的第二点处的膜厚度。 基于在第一点和第二点处的过程中膜厚度测量，优化过程确定描述相对于一组过程变量的去除速率和去除均匀性的抛光轮廓。 过程变量包括抛光过程的不同CMP机器设置，例如施加到晶片的向下力的量。 随后抛光轮廓被用于相应地抛光生产晶片。 对于每个生产晶片，通过使用膜厚检测器测量每个生产晶片的中心处的膜厚度和在每个生产晶片的外边缘处的膜厚度来确定其各自的去除速率和去除均匀性。 基于这些测量，根据去除速率和去除均匀度测量来调整一组工艺变量，以在每个相应的晶片被抛光时优化用于生产晶片的CMP工艺。

    CMP PROCESS INVOLVING FREQUENCY ANALYSIS-BASED MONITORING
    5.
    发明申请
    CMP PROCESS INVOLVING FREQUENCY ANALYSIS-BASED MONITORING 审中-公开
    涉及基于频率分析的监测的CMP过程

    公开(公告)号：WO2003019627A2

    公开(公告)日：2003-03-06

    申请号：PCT/US2002/026328

    申请日：2002-08-19

    Applicant: CABOT MICROELECTRONICS CORPORATION

    Inventor： CARTER, Phillip, W. ,  CHAMBERLAIN, Jeffrey, P.

    IPC: H01L21/00

    CPC classification number: B24B37/013 ,  B24B49/04 ,  B24B49/12 ,  G05B2219/34048 ,  G05B2219/37534 ,  G05B2219/49085

    Abstract: The invention provides a method for monitoring a chemical-mechanical polishing process, comprising receiving a real-time data signal from a chemical-mechanical polishing process, wherein the real-time data signal pertains to a frictional force, torque, or motor current, converting the data signal into a power spectrum of signals with different frequencies whose sum equals that of the original data signal, identifying and monitoring the signal components of the power spectrum corresponding to an aspect of the chemical-mechanical polishing process, detecting a change in the amplitude or frequency of the signal component, and altering the chemical-mechanical polishing process in response to the detected change. The invention also provides an apparatus for carrying out the aforementioned method.

    Abstract translation: 本发明提供了一种用于监测化学机械抛光工艺的方法，包括从化学 - 机械抛光工艺接收实时数据信号，其中实时数据信号涉及摩擦力，转矩或电机电流，转换 将数据信号转换成具有不同频率的信号的功率谱，其总和等于原始数据信号的信号，识别并监测对应于化学机械抛光处理的一个方面的功率谱的信号分量，检测振幅的变化 或频率，以及响应于检测到的变化而改变化学机械抛光过程。 本发明还提供一种用于执行上述方法的装置。

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