Abstract:
A semiconductor device by which a circuit having the same functions as those of the conventional circuits is realized with a very small number of elements, and complex logical functions can be designed simply, and further, its layout is also possible. A semiconductor device made up of at least one neuron MOS transistor having a gate electrode provided in a potentially floating state in a portion for isolating a source and drain region via a first insulation film, and plural control electrodes which are capacitively coupled to the floating gate electrode via a second insulation film, is characterized in that the first signal is inputted to a first control gate elctrode of the first neuron MOS transistor, the first signal is inputted to a first inverter comprising one or more stages, and the output of the first inverter is inputted to a second control gate electrode which is one of the plural control gate electrodes other than the first control gate electrode.
Abstract:
The invention relates to a circuit which compares a quantity supplied by a first neuron MOS field effect transistor (M1) with a reference value provided by a reference source (R). To this end there is a current mirror (SP) facilitating a comparison between a second current (I2) supplied by a reference transistor (R) and a first current (I1) supplied by the first neuron MOS field effect transistor (M1). The assessment circuit is activated or decoupled by a first switch unit (S1) and a second switch unit (S2). This ensures that no current flows in the evaluation circuit in the inoperative position. The result of comparison is applied to an inverter stage (IS). As the inverter stage (IS) is decoupled from the evaluation circuit by the first switch unit (S1), there is never an undefined level at the inverter stage (IS). Advantage can be taken of this during data processing in subsequent stages.
Abstract:
The subject of the application concerns threshold logic in which a non-inverting circuit branch (S) and an inverting circuit branch (S') are connected with at least one comparative weighting circuit (BC, BS), where the non-inverting circuit branch and the inverting circuit branch preferably are constructed alike and, in each case, contain at least one neuron transistor (NT1, NT1'), and where the corresponding neuron transistor gates in the non-inverting and the inverting circuit branches are activated inversely to one another.
Abstract:
A binary multiplier cell is made with the aid of two neuron MOD inverters (7, 8) which links the input values multiplier bit (a1), multiplicand bit (a2), sum bit (b) of a previous partial product and transfer bit (c) of a previous partial product to an output sum bit (11) and an output transfer bit (9). The two neuron MOS inverters (7, 8) are linked in such a way and so dimensioned that, as the output value, each neuron MOS inverter has the inverted sum bit or the inverted transfer bit of the multiplier cell. This method of producing a multiplier cell substantially reduces the number of transistors needed.
Abstract:
The invention relates to a circuit by means of which two electrical quantities in the form of a first transverse current (I1) and a second transverse current (I2) can be mutually compared. The circuit has a first inverter stage (n1, p1). An output (50, 51) of the two inverter stages (n1, p1, n2, p2) are coupled to an input of the other inverter stage (52, 53). Between the two outputs of the two inverter stages (n1, p2) there is a reset unit (5) which, on being activated, starts the current comparison. If the reset unit (5) is deactivated, the output datum obtained during the evaluation remains stable.