Abstract:
Procédé de réalisation d'un transformateur piézoélectrique (100) comportant une armature primaire (4) et une armature secondaire (8), dans lequel on met en œuvre une étape (a) au cours de laquelle, à partir d'un modèle équivalent du transformateur, on détermine un paramètre géométrique des armatures ou un paramètre physique d'un matériau constitutif des armatures, en prenant en compte une expression du dégagement de chaleur causé par les pertes dans le transformateur.
Abstract:
Disc drives are made with an actuator designed with at least one asymmetrical arm having two masses that move out of phase. The arm is modified by removing a portion of the higher-energy (longitudinal) side, the one with the greater total time-averaged strain energy. This modification reduces the phase difference between the first and the second arm, particularly for a relevant frequency range of interest. Disc drives made by this method exhibit a generally reduced out-of-phase motion, enhancing performance during seeking and track following, especially for arms with two heads that interact with surfaces of opposing discs.
Abstract:
A selective pulse interdiffusion process for magnetoresistive transducers. A magnetoresistive transducer has an active sensor region comprised of two separate layers of different materials. Because the resistance of the active region varies in relation to an external magnetic field, data stored on a magnetic disk can be read. Two passive end regions abutting either side of and flush with the active region are implemented to bias the transducer. The two end regions are initially comprised of the same materials making up the active region. These materials are interdiffused, giving it permanent magnetic properties for biasing the transducer. The interdiffusion is accomplished by selectively passing short pulses of current through the end regions. The heating causes the end regions to interdiffuse. By thusly pulsing the current, lateral heating of the active region is minimized. The selective pulse interdiffusion process can be applied simultaneously to a number of magnetoresistive elements which are chained together in the fabrication process.
Abstract:
A system and method are described for processing a slider (e.g., one to be used in a disk drive apparatus). Corners of the sliders are abraded while still a part of a row of sliders in a part-off operation. By abrading the corners of the sliders, head slap events between the slider and the recording media result in less damage to the recording media and less particulate matter from the slider being left on the recording media, improving data integrity for the recording media.
Abstract:
Magnetic tunnel junction (MTJ) and charge perpendicular-to-plane (CPP) magnetic sensors are disclosed which have a first antiferromagnetic layer for pinning the magnetization direction in a pinned layer and a second antiferromagnetic layer for providing bias stabilization of a free layer. The two antiferromagnetic layers may be formed from the same material and using a spin-flop effect may be initialized simulataneously. A disk drive using these sensors is disclosed.
Abstract:
A method of manufacturing a magnetic tunnel junction device, in which a stack (1) comprising two electrode layers (3, 7) and a barrier layer (5) extending in between is formed. One of the electrode layers is structured by means of etching, in which, during etching, a part of this layer is made thinner by removing material until a rest layer (7r) remains. This rest layer is subsequently removed by means of physical etching, in which at least substantially charged particles have a motion energy which is between the sputtering threshold of the magnetic material of the rest layer and the sputtering threshold of the non-magnetic material of the barrier layer. In the relevant method, it is prevented that the electrode layer which is not to be structured is detrimentally influenced during structuring of the other electrode layer.
Abstract:
Methods and apparatus are provided for sensing physical parameters. The apparatus (30) comprises a magnetic tunnel junction (MTJ) [32] and a magnetic field source (34) whose magnetic field (35) overlaps the MTJ and whose proximity to the MTJ varies in response to an input to the sensor. A magnetic shield (33) is provided at least on a face of the MFS away from the MTJ. The MTJ comprises first and second magnetic electrodes (36, 38) separated by a dielectric (37) configured to permit significant tunneling conduction therebetween. The first magnetic region has its spin axis pinned and the second magnetic electrode has its spin axis free. The magnetic field source is oriented closer to the second magnetic electrode than the first magnetic electrode. The overall sensor dynamic range is extended by providing multiple electrically coupled sensors receiving the same input but with different individual response curves and desirably but not essentially formed on the same substrate.
Abstract:
A magnetic reluctance element, wherein at least one of a pair of ferromagnetic layers sandwiching a non-magnetic layer has a composition represented by (MxLy)100-zRz, at the interface with the non-magnetic layer and the above non-magnetic layer contains at least one element selected from among B, C, N, O and P, where M is represented by FeaCobNic, L is at least one element selected from among Pt, Pd, Ir and Rh, R is an element constituting the above non-magnetic layer and generates a free energy in forming a compound together with at least one element selected from among B, C, N, O and P, which free energy is lower than that in the case of any element contained in the above composition as M or L, and a, b, c, x, y and z satisfy x + y = 100, 0
Abstract translation:一种磁阻元件,其中夹着非磁性层的一对铁磁层中的至少一个具有由(MxLy)100-zRz表示的组成,在与非磁性层和上述非磁性层的界面处包含 选自B,C,N,O和P中的至少一种元素,其中M由FeaCobNic表示,L是选自Pt,Pd,Ir和Rh中的至少一种元素,R是构成上述非离子表面活性剂的元素, 在与B,C,N,O和P中的至少一种元素形成化合物时产生自由能,该自由能低于上述组合物中所含的任何元素的情况下的自由能为M 或L,并且a,b,c,x,y和z满足x + y = 100,0
Abstract:
Magnetic tunnel junction (MTJ) and charge perpendicular-to-plane (CPP) magnetic sensors are disclosed which have a first antiferromagnetic layer for pinning the magnetization direction in a pinned layer and a second antiferromagnetic layer for providing bias stabilization of a free layer. The two antiferromagnetic layers may be formed from the same material and using a spin-flop effect may be initialized simulataneously. A disk drive using these sensors is disclosed.
Abstract:
A method of manufacturing an active element for use with a magnetic head includes depositing a magnetic material to form a magnetic member (24), and nitriding the magnetic member after the depositing step. Preferably, the depositing step comprises depositing nickel-iron alloy, and the nitriding step comprises plasma nitriding the magnetic member. Advantageously, plasma nitriding may be performed at a temperature below 300 degrees Celsius to avoid adverse effects to components of the active element, such as organic planars. Active elements manufactured according to the method of the invention are also disclosed.