Abstract:
Exemplary substrate edge polishing apparatuses may include a chuck body defining a substrate support surface. The apparatuses may include an edge ring seated on the chuck body. The apparatuses may include a retaining wall disposed radially outward of the edge ring. The apparatuses may include a slurry delivery port disposed radially inward of the retaining wall. The apparatuses may include a cylindrical spindle that is positionable over the chuck body. The apparatuses may include an annular polishing pad coupled with a lower end of the cylindrical spindle.
Abstract:
A substrate carrier configured to be attached to a polishing system for polishing a substrate is described herein. The substrate carrier includes a housing including a plurality of load couplings and a retaining ring coupled to the housing. The retaining ring can include an annular body having a central axis, an inner edge facing the central axis of the annular body, the inner edge having a diameter configured to surround a substrate, and an outer edge opposite the inner edge, wherein the plurality of load couplings contact the retaining ring at different radial distances measured from the central axis, and wherein the plurality of load couplings are configured to apply a radially differential force to the retaining ring.
Abstract:
A method of preheating a polishing pad of a semiconductor wafer polishing system includes heating a fluid to a first predetermined temperature. The method also includes applying the fluid to the polishing pad. The method further includes rotating the polishing pad such that the fluid covers the polishing pad. The fluid increases a polishing pad temperature to a second predetermined temperature.
Abstract:
Embodiments of the present disclosure generally relate to methods of manufacturing polishing platens for use on a chemical mechanical polishing (CMP) system and polishing platens formed therefrom. A method of manufacturing a polishing includes positioning a polishing platen on a support of a manufacturing system. The manufacturing system includes the support and a cutting tool facing there towards. Here, the polishing platen includes a cylindrical metal body having a polymer layer disposed on a surface thereof and the polymer layer has a thickness of about 100 μm or more. The method further includes removing at least a portion of the polymer layer using the cutting tool to form a polishing pad-mounting surface. Beneficially, the method may be used to form a pad-mounting surface having a desired flatness or shape, such as a concave or convex shape.
Abstract:
본 개시의 다양한 실시예에 따른 연마 조성물은 함불소 화합물, PH 조절제, 첨가제 및 물을 포함하며, 상기 함불소 화합물은 상기 연마 조성물의 총 중량 대비 0.01 ~ 20 중량 % 및 상기 PH 조절제는 상기 연마 조성물의 총 중량 대비 0.01 ~ 40 중량 % 일 수 있다.
Abstract:
The invention relates to a polishing pad for polishing a surface, material for a polishing pad and a method for manufacturing material for a polishing pad. A polishing pad according to an embodiment comprises a backing layer and a polishing layer made of sheep wool fibres fixed onto a surface of the backing layer, wherein the polishing layer comprises loops made of sheep wool fibres.
Abstract:
A method of fabricating a polishing layer of a polishing pad includes determining a desired distribution of particles to be embedded within a polymer matrix of the polishing layer. A plurality of layers of the polymer matrix is successively deposited with a 3D printer, each layer of the plurality of layers of polymer matrix being deposited by ejecting a polymer matrix precursor from a nozzle. A plurality of layers of the particles is successively deposited according to the desired distribution with the 3D printer. The polymer matrix precursor is solidified into a polymer matrix having the particles embedded in the desired distribution.
Abstract:
A polishing pad (200, 800, 1000) for polishing a substrate, the polishing pad comprising: a polishing body (200A, 1112) having a polishing side (201A) opposite a back surface (201B, 1116) and a polishing surface (200B, 1002, 1114) comprising a plurality of protrusions (202, 802, 1008, 1120) continuous with the polishing side (201A) of the polishing body (200A, 1112).