公开(公告)号：WO2020123446A2

公开(公告)日：2020-06-18

申请号：PCT/US2019/065380

申请日：2019-12-10

Applicant: MICRON TECHNOLOGY, INC.

Inventor： CHEN, Zhengang ,  MYLAVARAPU, Sai, Krishna ,  SHEN, Zhenlei ,  XIE, Tingjun ,  KWONG, Charles, S.

IPC: G06F3/06 ,  G06F11/07 ,  G06F11/073 ,  G06F11/076 ,  G06F11/1048 ,  G06F11/1068 ,  G06F11/141 ,  G06F2201/81 ,  G06F2201/835 ,  G11C16/26 ,  G11C16/32 ,  G11C16/3404 ,  G11C2029/0409 ,  G11C2029/0411 ,  G11C29/42 ,  G11C29/44 ,  G11C29/4401 ,  G11C29/50012 ,  G11C29/52

Abstract: Described herein are embodiments related to defect detection in memory components of memory systems with time-varying bit error rate. A processing device performs an error recovery flow (ERF) to recover a unit of data comprising data and a write timestamp indicating when the unit of data was written. The processing device determines whether to perform a defect detection operation to detect a defect in the memory component using a bit error rate (BER), corresponding to the read operation, and the write timestamp in the unit of data. The processing device initiates the defect detection operation responsive to the BER condition not being expected for the calculated W2R (based on the write timestamp). The processing device can use an ERF condition and the write timestamp to determine whether to perform the defect detection operation. The processing device initiates the defect detection operation responsive to the ERF condition not being expected the calculated W2R (based on the write timestamp).

公开(公告)号：WO2022241044A1

公开(公告)日：2022-11-17

申请号：PCT/US2022/028847

申请日：2022-05-11

Applicant: MICRON TECHNOLOGY, INC.

Inventor： ZHOU, Zhenming ,  LU, Yang ,  ZHU, Jiangli ,  XIE, Tingjun

IPC: G11C29/50 ,  G11C29/02 ,  G11C29/023 ,  G11C29/028 ,  G11C29/38 ,  G11C29/44 ,  G11C29/50012

Abstract: A system and method for measuring the degradation of one or more memory devices of a memory sub-system. An example system including a memory controller operatively coupled with a memory device and configured to perform operations comprising: testing different values for a setting of the memory device, wherein the setting of the memory device affects a duty cycle of a signal internal to the memory device; selecting an optimum value for the setting based on access errors during the testing, wherein the optimum value minimizes access errors; determining a degradation measurement for the memory device based on the optimum value; and providing a notification to a host system based on the degradation measurement.

公开(公告)号：WO2021127297A1

公开(公告)日：2021-06-24

申请号：PCT/US2020/065780

申请日：2020-12-18

Applicant: MICRON TECHNOLOGY, INC.

Inventor： CHIANG, Pin-Chuo ,  PICCARDI, Michele ,  PEKNY, Theodore T.

IPC: G11C29/02 ,  G11C29/50 ,  G11C27/02 ,  G08B29/06 ,  G08B29/123 ,  G11C2029/1202 ,  G11C27/026 ,  G11C29/024 ,  G11C29/025 ,  G11C29/028 ,  G11C29/50008 ,  G11C29/50012 ,  G11C8/08 ,  H03K17/18

Abstract: The RC sensor circuit includes a driver circuit that includes an output configured to drive the RC sensor circuit to a drive voltage using a representative copy of a current that drives an electronic circuit line. The RC sensor circuit includes an integration capacitor. The integration capacitor is configured to integrate the representative copy of the current over a first time period to generate a first representative voltage and over a second time period to generate a second representative voltage. The RC sensor circuit includes a sampling circuit coupled to the integration capacitor. The sampling circuit is configured to determine a first sample voltage by sampling the first representative voltage and a second sample voltage by sampling the second representative voltage. A ratio of the first sample voltage and the second sample voltage is indicative of an RC time constant of the electronic circuit line.

公开(公告)号：WO2021127296A1

公开(公告)日：2021-06-24

申请号：PCT/US2020/065779

申请日：2020-12-18

Applicant: MICRON TECHNOLOGY, INC.

Inventor： CHIANG, Pin-Chuo ,  PICCARDI, Michele ,  PEKNY, Theodore T.

IPC: G11C29/02 ,  G11C29/50 ,  G04F10/04 ,  G08B29/06 ,  G08B29/123 ,  G11C2029/1202 ,  G11C27/026 ,  G11C29/024 ,  G11C29/025 ,  G11C29/026 ,  G11C29/028 ,  G11C29/50008 ,  G11C29/50012 ,  G11C8/08 ,  H03H11/1291 ,  H03H7/0153

Abstract: A resistor-capacitor (RC) sensor circuit of an electronic device is driven to a drive voltage using a representative copy of a current that drives an electronic circuit line of the electronic device. The RC sensor circuit is to sample voltages that are indicative of an RC time constant of the electronic circuit line. A first sample voltage is determined by sampling a first representative voltage generated at the RC sensor circuit by driving the RC sensor circuit with the representative copy of the current over a first time period. A second sample voltage is determined by sampling a second representative voltage generated at the RC sensor circuit by driving the RC sensor circuit with the representative copy of the current over a second time period. A ratio of the first sample voltage and the second sample voltage is indicative of the RC time constant of the electronic circuit line.