公开(公告)号：WO2021141660A1

公开(公告)日：2021-07-15

申请号：PCT/US2020/059326

申请日：2020-11-06

申请人： RAYTHEON COMPANY

发明人： GETTY, Jonathan ,  LOFGREEN, Daniel D. ,  MILLER, Alexandra V.

IPC分类号： H01L23/00 ,  H01L2224/05567 ,  H01L2224/05571 ,  H01L2224/05609 ,  H01L2224/05655 ,  H01L2224/0807 ,  H01L2224/08147 ,  H01L2224/80211 ,  H01L2224/80345 ,  H01L2224/80359 ,  H01L2224/80815 ,  H01L2224/80896 ,  H01L2224/83209 ,  H01L2224/83409 ,  H01L2224/83896 ,  H01L24/05 ,  H01L24/08 ,  H01L24/27 ,  H01L24/30 ,  H01L24/80 ,  H01L2924/14

摘要： A direct bond hybridization (DBH) method is provided. The DBH method includes preparing a first underlying layer, a first contact layer disposed on the first underlying layer and a first contact electrically communicative with the first underlying layer and protruding through the first contact layer, preparing a second underlying layer, a second contact electrically communicative with the second underlying layer and formed of softer material than the first contact and a second contact layer disposed on the second underlying layer and defining an aperture about the second contact and a moat at least partially surrounding the second contact and bonding the first and second contact layers whereby the first contact contacts the second contact such that the second contact deforms and expands into the moat.