公开(公告)号：WO2021141660A1

公开(公告)日：2021-07-15

申请号：PCT/US2020/059326

申请日：2020-11-06

Applicant: RAYTHEON COMPANY

Inventor： GETTY, Jonathan ,  LOFGREEN, Daniel D. ,  MILLER, Alexandra V.

IPC: H01L23/00 ,  H01L2224/05567 ,  H01L2224/05571 ,  H01L2224/05609 ,  H01L2224/05655 ,  H01L2224/0807 ,  H01L2224/08147 ,  H01L2224/80211 ,  H01L2224/80345 ,  H01L2224/80359 ,  H01L2224/80815 ,  H01L2224/80896 ,  H01L2224/83209 ,  H01L2224/83409 ,  H01L2224/83896 ,  H01L24/05 ,  H01L24/08 ,  H01L24/27 ,  H01L24/30 ,  H01L24/80 ,  H01L2924/14

Abstract: A direct bond hybridization (DBH) method is provided. The DBH method includes preparing a first underlying layer, a first contact layer disposed on the first underlying layer and a first contact electrically communicative with the first underlying layer and protruding through the first contact layer, preparing a second underlying layer, a second contact electrically communicative with the second underlying layer and formed of softer material than the first contact and a second contact layer disposed on the second underlying layer and defining an aperture about the second contact and a moat at least partially surrounding the second contact and bonding the first and second contact layers whereby the first contact contacts the second contact such that the second contact deforms and expands into the moat.

公开(公告)号：WO2021178043A1

公开(公告)日：2021-09-10

申请号：PCT/US2021/012166

申请日：2021-01-05

Applicant: RAYTHEON COMPANY

Inventor： GETTY, Jonathan ,  EACHUS, Bradly ,  BREHL, David

IPC: H01L27/146

Abstract: A method of forming an image detector from an optical detector having a first side connected to a substrate and a second side opposite the first side. The method includes: receiving the detector; electrically coupling the second side of the detector to a read out integrated circuit (ROIC); securing the detector to the ROIC with an adhesive, wherein the adhesive surrounds the detector and at least a portion of the substrate. The method also includes chemically removing at least some of the substrate to expose an exposed portion of the first side of the detector. Such removal results in the formation of an adhesive fence from the adhesive that has a fence upper surface that is above the first side on which an optical element is mounted such that an air gap exists between the first side of the detector and the optical element.

公开(公告)号：WO2012148869A2

公开(公告)日：2012-11-01

申请号：PCT/US2012/034730

申请日：2012-04-24

Applicant: RAYTHEON COMPANY ,  GETTY, Jonathan ,  HAMPP, Andreas ,  RAMIREZ, Aaron, M. ,  MILLER, Scott, S.

Inventor： GETTY, Jonathan ,  HAMPP, Andreas ,  RAMIREZ, Aaron, M. ,  MILLER, Scott, S.

IPC: H01L21/60 ,  H01L23/485

CPC classification number: H01L24/05 ,  H01L24/03 ,  H01L24/08 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/03444 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/0401 ,  H01L2224/05073 ,  H01L2224/05083 ,  H01L2224/05111 ,  H01L2224/05116 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05184 ,  H01L2224/05573 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05664 ,  H01L2224/05669 ,  H01L2224/11444 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/136 ,  H01L2224/16148 ,  H01L2224/81091 ,  H01L2224/81201 ,  H01L2224/81205 ,  H01L2224/8181 ,  H01L2224/8191 ,  H01L2225/06513 ,  H01L2924/01006 ,  H01L2924/01019 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/10332 ,  H01L2924/10335 ,  H01L2924/10379 ,  H01L2924/3651 ,  H01L2924/01022

Abstract: A contact structure for interconnecting a first substrate to an indium interconnect structure on a second substrate. The contact structure comprises a diffusive layer and a non-oxidizing layer, with a thickness of less than approximately 150 nm. positioned on the diffusive layer for alignment with the indium interconnect.

Abstract translation: 一种用于将第一衬底与铟互连结构互连在第二衬底上的接触结构。 接触结构包括扩散层和非氧化层，厚度小于约150nm。 位于扩散层上以与铟互连对准。

公开(公告)号：WO2018048482A1

公开(公告)日：2018-03-15

申请号：PCT/US2017/030796

申请日：2017-05-03

Applicant: RAYTHEON COMPANY

Inventor： CAHILL, Andrew ,  GETTY, Jonathan ,  LOFGREEN, Daniel, D. ,  DRAKE, Paul, A.

IPC: H01L21/67 ,  H01L21/683

Abstract: In one aspect, a method includes heating a wafer chuck, heating a first wafer, depositing a first epoxy along at least a portion of a surface of the first wafer disposed on the wafer chuck, spinning the wafer chuck to spread the first epoxy at least partially across the first wafer, placing a second wafer on the first epoxy disposed on the first wafer and bonding the second wafer to the first epoxy under vacuum to form a two-wafer-bonded structure.

Abstract translation: 在一个方面，一种方法包括加热晶片卡盘，加热第一晶片，沿着设置在晶片卡盘上的第一晶片的表面的至少一部分沉积第一环氧树脂，旋转晶片 卡盘以将第一环氧树脂至少部分地分散在第一晶圆上，将第二晶圆放置在设置在第一晶圆上的第一环氧树脂上，并在真空下将第二晶圆键合到第一环氧树脂上以形成双晶圆键合结构。 p>

公开(公告)号：WO2015061010A1

公开(公告)日：2015-04-30

申请号：PCT/US2014/058539

申请日：2014-10-01

Applicant: RAYTHEON COMPANY

Inventor： GERBER, Kenneth, Allen ,  GETTY, Jonathan ,  RAMIREZ, Aaron, M. ,  MILLER, Scott, S.

IPC: H01L21/603 ,  H01L21/67 ,  H01L27/146

CPC classification number: H01L31/0203 ,  H01L24/26 ,  H01L24/75 ,  H01L24/81 ,  H01L24/83 ,  H01L27/144 ,  H01L27/14634 ,  H01L27/1465 ,  H01L27/1469 ,  H01L2224/16145 ,  H01L2224/75101 ,  H01L2224/81193 ,  H01L2224/81209 ,  H01L2224/8182 ,  H01L2924/351

Abstract: A method for bonding a first semiconductor body (10) having a plurality of electromagnetic radiation detectors to a second semiconductor body (14) having read out integrated circuits for the detectors. The method includes: aligning electrical contacts (17) for the plurality of electromagnetic radiation detectors with electrical contacts (18) of the read out integrated circuits; tacking the aligned electrical contacts for the plurality of electromagnetic radiation detectors with electrical contacts of the read out integrated circuits to form an intermediate stage structure; packaging the intermediate stage structure into a vacuum sealed electrostatic shielding container (22) having flexible walls; inserting the package with the intermediate stage structure therein into an isostatic pressure chamber (24); and applying the isostatic pressure to the intermediate stage structure through walls of the container. The container includes a stand-off to space walls of the container from edges of the first semiconductor body.

Abstract translation: 一种用于将具有多个电磁辐射检测器的第一半导体本体（10）接合到具有用于检测器的已读出集成电路的第二半导体本体（14）的方法。 该方法包括：将用于多个电磁辐射检测器的电触头（17）对准读出的集成电路的电触点（18）; 通过读出的集成电路的电接触来对多个电磁辐射检测器的对齐的电触点进行定位，以形成中间级结构; 将中间级结构包装成具有柔性壁的真空密封静电屏蔽容器（22）; 将其中间级结构的包装插入等静压压力室（24）中; 以及通过容器的壁将等静压施加到中间阶段结构。 容器包括从第一半导体本体的边缘到容器的空间壁的间隔壁。