公开(公告)号：WO2021141798A1

公开(公告)日：2021-07-15

申请号：PCT/US2020/067266

申请日：2020-12-29

申请人： TEXAS INSTRUMENTS INCORPORATED ,  TEXAS INSTRUMENTS JAPAN LIMITED

发明人： SRIDHARAN, Vivek, Swaminathan ,  TUNCER, Enis ,  MANACK, Christopher, Daniel ,  THOMPSON, Patrick, Francis

IPC分类号： H01L21/50 ,  H01L23/525 ,  H01L2224/02331 ,  H01L2224/02333 ,  H01L2224/02381 ,  H01L23/5221 ,  H01L23/5226 ,  H01L23/5286 ,  H01L24/02 ,  H01L24/05 ,  H01L24/13 ,  H01L24/81 ,  H01L24/95

摘要： A semiconductor device (150) includes a semiconductor surface having circuitry (180) with metal interconnect layers (122) over the semiconductor surface including a selected metal interconnect layer providing an interconnect trace (171) having a first and second end (171a, 171b). A top dielectric layer (119) is on the top metal interconnect layer. A redistribution layer (RDL) (123) is on the top dielectric layer. A corrosion interruption structure (CIS) (170) including the interconnect trace bridges an interrupting gap (123b) in a trace of the RDL.