Abstract:
A pair of comparators (14, 22) is provided with attenuated input signals. Each comparator is provided with a different reference level (16, 30) so that two sets of complementary digital outputs (19, 21) (27, 29) may be obtained with different pusle widths. Hysteresis control (66) is provided to the comparators to compensate for noise present at the comparator inputs.
Abstract:
A circuit (10) and method for providing programmable hysteresis levels is disclosed. The circuit includes comparators (C1-C4) for producing output signals (V01-V04) when an input signal (V(PTAT) crosses respective set points and a hysteresis circuit (38) for establishing a hysteresis in the output signals. When a comparator's output signal is "on", the input signal is shifted by a hysteresis differential. The output signal is terminated when the shifted input signal returns to the set point. The hysteresis circuit includes a programmable hysteresis input (40) for adjusting the hysteresis differential to different preset and intermediate hysteresis levels.
Abstract:
An improved sense amplifier circuit (Figs. 3, 5, 6) for sensing information in the cells (I, I) of a semiconductor memory device. The sense amplifier circuit as presented includes AC-coupled positive feedback means (40, 42 or 140, 142) to provide a reduction in sensing delay time, and thus, faster memory access time.
Abstract:
In order to reduce the delay between the zero passage of the input voltage and the switching of the output in an analog comparator, a second transistor (T2; T20) controlled by a reference potential (VR1; VR2) is connected with its output circuit between the input and the output of a first transistor (T1) which is controlled by the output of a comparator differential stage. The saturation of said first transistor can be prevented with such a circuit.
Abstract:
A voltage detection circuit for preventing the erasing and programming of a nonvolatile memory device during power up and power down sequences. A power source is coupled to the high voltage (Vpp) and the low voltage input (Vcc) to provide a reference voltage (Vccx) in response to the greater of the high voltage input (Vpp) or the low voltage input (Vcc). A low voltage detector (4) is coupled to the low voltage input (Vcc) and the reference voltage (Vccx) and has circuitry to provide a first not-ready signal (LVcc) when the voltage on the low input (Vcc) falls below a predetermined low voltage threshold. A high voltage detector (6) is coupled to the high voltage input (Vpp), the reference voltage (Vccx), and the output of the low voltage detector (LVcc) and has circuitry to provide a second not-ready signal (Vpph/Vdphb) when either the first non-ready signal (Vcc) is received or the voltage on the high voltage input falls below a predetermined high voltage threshold. The not-ready signals (LVcc) prevent erasing or programming operations to occur in the nonvolatile memory device.
Abstract:
A voltage comparator produces a current output as a function of the differential input voltage. Three transfer functions are detailed. In the linear transfer mode the output varies linearly in the transition region and swings between zero and a well-defined current value. In a truncated response mode, the output is zero for zero differential input voltage, remains at zero for one input voltage polarity, and rises for the other polarity input linearly to a well-defined current value. In the folded response mode the output current is zero for zero differential input and rises linearly in the transition region to a well-defined current value for either polarity of differential input. While a CMOS form of construction is preferred, bipolar construction is also shown.
Abstract:
An amplifier (10) for a semiconductor circuit provides two circuit paths between VCC and ground, each including the source-drain path of a corresponding primary transistor (23, 28). Two impedances (16, 18) are coupled to respective inputs (12, 14). The primary transistors are kept in saturation so that the voltage differential is developed at outputs (38, 40) located along the two circuit paths. Also, a clamp circuit has a common node (30) coupling the gate electrodes of the primary transistors together. Secondary transistors (24, 26) are included to mimic voltage changes on either input.
Abstract:
A strobed comparator for a large common mode range is described, which includes a mixture of natural and enhancement transistors, and a high-swing folded-cascode architecture, to achieve an improved dynamic range suitable for audio applications.
Abstract:
An all CMOS voltage comparator circuit which incorporates a strobed latch. A strobe signal precharges the entire circuit to a known state which is independent of the input voltages and in which substantially no static current is drawn. Under static conditions after the circuit has been strobed, the source-coupled pair (52, 54) is virtually disconnected from the supply voltage(s) and draws almost no current, as well. When the circuit is strobed, a source-coupled FET pair (52, 54) amplifies the differential input signal, with positive feedback provided through a pair of cross-coupled PMOS load transistors (36, 38) as well as cross-coupled NMOS cascode transistors (46, 48). The source-coupled pair feeds a pair of output buffers (62-68) or drivers, whose FETS are sized such that a 'low' voltage level is generated on both outputs until the source-coupled pair resolves the input voltage difference (i.e., the differential input voltage exceeds the switching threshold). At that time, the outputs become complementary digital levels and are usable.
Abstract:
A comparator circuit (56) constructed and arranged to change state when an unknown input waveforms voltage (sig. 1 in at 42) passes through an operator-selected trip voltage.