Abstract:
An electron exit window foil (106) for an electron beam emitter (100) having an electron beam generator (103) and operating in a corrosive environment (P1). The electron exit window foil (106) has a sandwich structure with an outer side arranged to face the corrosive environment (P1) and an inner side arranged to face the electron beam generator (103). The sandwich structure comprises, as seen from the outer side to the inner side, a protective layer, for protecting the sandwich structure from the corrosive environment (P1), a supporting layer made of Ti, for providing structural support for the sandwich structure, and a thermally conductive layer made of Al, for conveying heat from the sandwich structure.
Abstract:
An electron exit window foil for use with a high performance electron beam generator operating in a corrosive environment is provided. The electron exit window foil comprises a sandwich structure having a film (202) of Ti, a first layer (204) of a material having a higher thermal conductivity than Ti, and a flexible second layer (206) of a material being able to protect said film (202) from said corrosive environment, wherein the second layer (206) is facing the corrosive environment.
Abstract:
The present invention relates to a method of manufacturing a window transparent for electrons of an electron beam (E), in particular of an X-ray source. In order to enable a less costly and elaborate manufacture of such a window and in order to prevent unwanted sharp edges in a window area which may damage the window foil (2), a method is proposed comprising the steps of: -providing on a surface (11) of a carrier element (1) to which a window foil (2) shall be a fixed a receiving area (13, 16) for receiving a soldering material (3) used for fixing said window foil (2) to said carrier element (1), said carrier element (1) comprising a through hole (12) for the transmission of said electrons (E), -covering said surface (11) having said receiving area (13, 16) with a soldering material (3) such that substantially only said receiving area (13, 16) is filled with soldering material (3), -placing said window foil (2) on top of said surface (1) and -heating said soldering material (3) for fixing said window foil (2) to said surface (11).
Abstract:
A vacuum tube electron beam device (15) includes a thin single crystal, electron permeable, gas impermeable membrane (20) for electron transmission. The single crystal membrane may include a small thickness due to high strength, and is highly transmissive to free the electrons due to the small thickness. The ordered crystalline structure of such membrane provides minimal obstructions to electron beams, and yet is highly impermeable to penetration by gas and liquid molecules. A doped silicon anode (19) can provide support for the membrane with matching thermal expansion characteristics, and a crystalline anode can be integral with the membrane. A double membrane embodiment confines the cooling fluid so that it passes close to both membranes.
Abstract:
Die Erfindung betrifft eine Vorrichtung und ein Verfahren zum Beaufschlagen von einem gasförmigen Medium mit beschleunigten Elektronen mittels eines Elektronenstrahlerzeugers, welcher mindestens eine Kathode (107) zum Emittieren von Elektronen und mindestens ein Elektronenaustrittsfenster (104; 304) aufweist, wobei a) die mindestens eine Kathode (107) ringförmig und das mindestens eine Elektronenaustrittsfenster (104; 304) als ringförmiger erster Hohlzylinder ausgebildet wird, wobei das ringförmige als erster Hohlzylinder ausgebildete Elektronenaustrittsfenster (104; 304) eine Innenwandung eines ringförmigen Gehäuses (101;301) des Elektronenstrahlerzeugers bildet, wobei die von der Kathode (107) emittierten Elektronen zur Ringachse (103; 303) des ringförmigen Gehäuses (101; 301) beschleunigt werden; b) innerhalb des als erster Hohlzylinder ausgebildeten Elektronenaustrittsfensters (104; 304) ein ringförmiger zweiter Hohlzylinder (112; 312) angeordnet wird, welcher einen ringförmigen Raum (113; 313) zwischen dem ersten Hohlzylinder und dem zweiten Hohlzylinder (112; 312) begrenzt; c) ein Kühlgas durch den ringförmigen Raum (113; 313) zwischen dem ersten Hohlzylinder und dem zweiten Hohlzylinder (112; 312) geführt wird und d) das mit beschleunigten Elektronen zu beaufschlagende gasförmige Medium durch den zweiten Hohlzylinder (112; 312) geführt wird.
Abstract:
The invention relates to a radiation window structure. The radiation window structure comprising a substrate (102) made of silicon nitride and a coating layer (104) grown from a vapor phase on outer surface of the substrate (102). The invention also relates to a method for manufacturing a radiation window structure.
Abstract:
An exit window (15) can include an exit window foil (12), and a support grid (13) contacting and supporting the exit window foil. The support grid can have first and second grids (16, 18), each having respective first and second grid portions (16c, 18c) that are positioned in an alignment and thermally isolated from each other, The first and second grid portions can each have a series of apertures (16a, 18a) that are aligned for allowing the passage of a beam (14) therethrough to reach and pass through the exit window foil (12). The second grid portion (18c) can contact the exit window foil. The first grid portion (16c) can mask the second grid portion (18c) and the exit window foil (12) from heat caused by the beam striking the first grid portion (16e).
Abstract:
The present invention refers to a method for assembling an electron exit window of an electron beam generating device, comprising the steps of: arranging a foil support plate (208) on a housing of the electron beam generating device, bonding a window foil (206) to a frame (214) along at least one continuous bonding line (218), thus creating an exit window sub-assembly (216), and attaching the exit window sub-assembly (216) onto the housing. The invention also relates to an electron exit window assembly.
Abstract:
The present disclosure is directed, in part, to a method for fabricating a low-stress, ultra-thin membrane as well as the low-stress, ultra-thin membrane formed by this method. The method includes: layering a first layer on a semiconductor substrate; etching a hole in the first layer; layering a second layer on the membrane of the first layer and over the hole; and etching the substrate beginning from the bottom surface thereof, such that at least a portion of the substrate aligned with the hole in the first layer is removed. The first and second layers are made of substantially the same material, which will usually be silicon nitride, however, it is contemplated that other dielectric materials could be used, but it is preferred that the second layer has an amorphous structure. It is preferred that the second layer be formed with a slightly bubble-shape to help deflect stresses on the second layer. Generally, low pressure chemical vapor deposition will be used to create at least the first and second layers. As a result of this basic method, the second layer has an ultra-thin thickness. Among other devices, the ultra-thin membrane is useful in a device for detecting physical characteristics of a sample bombarded with electrons. In such a device, the ultra-thin, low-stress membrane is positioned adjacent a electron detector. The device may further include an evacuated chamber at least partially bounded by the ultra-thin low-stress membrane.