Disclosed is a photoelectric conversion device manufacturing method whereby a first p-type semiconductor layer (31), a first i-type semiconductor layer (32) and a first n-type semiconductor layer (33) which configure a first photoelectric conversion unit (3), and a second p-type semiconductor layer (41) which configures a second photoelectric conversion unit (4) are respectively formed consecutively in a different reduced-pressure chamber; the second p-type semiconductor layer (41) is exposed to the atmosphere; and a second i-type semiconductor layer (42) and a second n-type semiconductor layer (43) which configure the second photoelectric conversion unit are formed in the same reduced-pressure chamber on the p-type semiconductor layer (41) of the second photoelectric conversion unit (4) which has been exposed to the atmosphere.