A SiC semiconductor device includes: a substrate (1), a drift layer (2), and a base region (3) stacked in this order; first and second source regions (4a, 4b) and a contact layer (5) in the base region; a trench (6) penetrating the source and base regions; a gate electrode (8) in the trench; an interlayer insulation film (10) with a contact hole covering the gate electrode; a source electrode (9) coupling with the source region and the contact layer via the contact hole; a drain electrode (11) on the substrate; and a metal silicide film (30). The high concentration second source region is shallower than the low concentration first source region, and has a part covered with the interlayer insulation film, which includes a low concentration first portion near a surface and a high concentration second portion deeper than the first portion. The metal silicide film on the second part has a thickness larger than the first portion.