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发明公开
CN102531575A 一种Sm2O3掺杂BaTiO3基片式PTCR陶瓷材料及其制备方法 无效 - 驳回

一种Sm2O3掺杂BaTiO3基片式PTCR陶瓷材料及其制备方法
摘要：
本发明公开了提供一种Sm2O3掺杂BaTiO3基片式PTCR陶瓷材料及其制备方法。该陶瓷材料的结构式为：(Bay-xSmx)TiO3+mSiO2+nMn(NO3)2+pBN，式中x=0.2~0.8mol%，y=1.014~1.029，m=0.05~0.6mol%，n=0.005~0.02mol%，p=0~4.4mol%。本发明采用流延成型方法，利用Sm2O3掺杂BaTiO3基PTCR粉体制得的流延浆料制备坯体，叠层压片和切片；在还原气氛中烧结，在空气中再氧化，再在表面上涂电极。本发明克服了高Ba/Ti比的半导化陶瓷材料电阻率高的不足，PTCR陶瓷材料具有晶粒尺寸小、室温电阻率低和PTC效应大的特点。
摘要（英）：

The invention discloses an Sm2O3-doped BaTiO3 substrate type PTCR ceramic material and a preparation method thereof. The structural formula of the ceramic material is as follows: (Bay minus xSmx) TiO3 plus mSiO2 plus nMn (NO3)2 plus pBN; in the formula, x is equal to 0.2 to 0.8 mol percent, y is equal to 1.014 to 1.029, m is equal to 0.05 to 0.6 mol percent, n is equal to 0.005 to 0.02 mol percent, and p is equal to 0 to 4.4 mol percent. The invention adopts the tape-casting method and utilizes tape-cast slurry prepared from Sm2O3-doped BaTiO3-based PTCR powder to prepare green bodies which are laminated and cut; the green sample is sintered in a reducing atmosphere and then oxidated in the air, and the surfaces are coated with electrodes. The invention overcomes the defect of high-Ba/Ti ratio semiconductive ceramic material, i.e. high resistivity, and the PTCR ceramic material has the characteristics of small grain size, low room-temperature resistivity and high PTC (Positive Temperature Coefficient) effect.

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