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发明公开
CN103094324A 沟槽型绝缘栅双极型晶体管及其制备方法 有权 转让

沟槽型绝缘栅双极型晶体管及其制备方法
摘要：
本发明提供一种沟槽型绝缘栅双极型晶体管（InsulatedGateBipolarTransistor，IGBT）及其制备方法，属于IGBT技术领域。该沟槽型IGBT包括集电极层、漂移层、发射极层、沟槽、以及形成于沟槽的栅介质层和栅电极，该沟槽中的栅电极的上表面被回刻蚀至低于所述基极层的上表面、以使所述发射极层可操作地被倾角式离子注入形成。因此，该制备方法中包括栅电极的回刻蚀步骤以及以所述栅电极为掩膜倾角式离子注入形成发射极层的步骤。采用该方法制备形成的沟槽型IGBT的导通电阻小，并能兼顾减低其芯片面积。
摘要（英）：

The invention provides a groove type insulated gate bipolar transistor (IGBT) and a preparation method thereof, and belongs to the technical field of IGBTs. The groove type IGBT comprises a collector layer, a drifting layer, an emitter layer, a groove, a gate medium layer and a gate electrode, wherein the gate medium layer and the gate electrode are formed inside the groove, the upper surface of the gate electrode inside the groove is back-corroded to be lower than the upper surface of a base layer, and therefore the emitter layer can be operated and formed by dip angle type ions in an injected mode. Therefore, the preparation method comprises the back-corroding step of the gate electrode and the step that the gate electrode serves as mask dip angle type ions to form the emitter layer. The groove type IGBT formed in the preparation method is small in on-resistance, and meanwhile, reduces the chip area.

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