The present disclosure relates to a semiconductor device having a semiconductor switching element with an insulated gate structure and a free wheel diode coupled in parallel with each other. The semiconductor device includes a switching element having: a drift layer; a base region; an element-side first impurity region arranged in a surface part of the base region; an element-side gate electrode arranged in the base region sandwiched between the first impurity region and the drift layer; a second impurity region contacting the drift layer; an element-side first electrode electrically coupled with the element-side first impurity region and the base region; and an element-side second electrode electrically coupled with the second impurity region. The free wheel diode includes: a first conductive layer; a second conductive layer; a diode-side first electrode coupled to the second conductive layer; a diode-side second electrode coupled to the first conductive layer; a diode-side first impurity region arranged in a surface part of the second conductive layer; and a diode-side gate electrode including a first gate electrode which provides an excess carrier injection suppression gate.