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发明授权
CN104332177B 非易失性锁存电路和逻辑电路，以及使用其的半导体器件 有权

非易失性锁存电路和逻辑电路，以及使用其的半导体器件
摘要：
非易失性锁存电路和逻辑电路以及使用其的半导体器件。非易失性锁存电路包括：具有环形结构的锁存部分，其中第一元件的输出电连接至第二元件的输入，且第二元件的输出电连接至第一元件的输入；以及用于保持该锁存部分的数据的数据保持部分。在数据保持部分中，使用用氧化物半导体作为用于形成沟道形成区的半导体材料的晶体管作为开关元件。此外，包括了电连接至晶体管的源电极或漏电极的反相器。使用该晶体管，被保持在锁存部分中的数据可被写入反相器的栅极电容器或被独立提供的电容器。
摘要（英）：

The invention provides a circuit comprising a first element; a second element; a first transistor; a second transistor; and a capacitor, wherein an output of the first element is electrically connected to an input of the second element, and an output of the second element is electrically connected to an input of the first element, wherein the input of the first element is electrically connected to a first wiring configured to be supplied with an input signal and the output of the first element is electrically connected to a second wiring configured to be supplied with an output signal, wherein a channel formation region of the first transistor includes an oxide semiconductor, wherein one of a source and a drain of the first transistor is electrically connected to the second wiring, wherein the other of the source and the drain of the first transistor is electrically connected to one of electrodes of the capacitor and a gate of the second transistor, and wherein one of a source and a drain of the second transistor is electrically connected to the first wiring.

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