The invention discloses a film growth real time temperature measurement method and belongs to the technical field of semiconductor manufacture. The method includes acquiring calibration coefficients of a film growth reaction chamber of a dual wavelength temperature measurement structure; measuring an actual heat radiation power, substituting the calibration coefficients and the actual heat radiation power into a formula, and calculating and acquiring the temperature of the film growth reaction chamber. Since the film growth reaction chamber what the dual wavelength temperature measurement structure attached to is calibrated, and the calculated and acquired film temperature is closer to the true value.