发明公开
EP1154466A4 METHOD AND APPARATUS FOR PLASMA PROCESSING 审中-公开
PLASMA BEARBEITUNGSMETHODE UND APPARAT

METHOD AND APPARATUS FOR PLASMA PROCESSING
摘要:
Temperature adjustment means is buried near the upper surface of a ring structure that has substantially the same height as a wafer stage and surrounds it. The temperature adjustment means is controlled by a temperature control unit (61) according to a recipe for the process conditions so that the temperature of the wafer surface and the upper surface of the ring structure may become uniform. This minimizes the difference between temperatures above the wafer and above the ring structure, resulting in uniform deposition of film.
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