发明公开
- 专利标题: METHOD AND APPARATUS FOR PLASMA PROCESSING
- 专利标题(中): PLASMA BEARBEITUNGSMETHODE UND APPARAT
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申请号: EP00901898申请日: 2000-01-26
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公开(公告)号: EP1154466A4公开(公告)日: 2003-08-27
- 发明人: AMANO HIDEAKI , ISHIZUKA SHUICHI , KOBAYASHI TAKASHI , TSUBOI KYO
- 申请人: TOKYO ELECTRON LTD
- 专利权人: TOKYO ELECTRON LTD
- 当前专利权人: TOKYO ELECTRON LTD
- 优先权: JP2112099 1999-01-29
- 主分类号: C23C16/458
- IPC分类号: C23C16/458 ; C23C16/46 ; C23C16/50 ; C23C16/511 ; H01J37/32 ; H01L21/00 ; H01L21/205
摘要:
Temperature adjustment means is buried near the upper surface of a ring structure that has substantially the same height as a wafer stage and surrounds it. The temperature adjustment means is controlled by a temperature control unit (61) according to a recipe for the process conditions so that the temperature of the wafer surface and the upper surface of the ring structure may become uniform. This minimizes the difference between temperatures above the wafer and above the ring structure, resulting in uniform deposition of film.
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