公开(公告)号：EP1840950A4

公开(公告)日：2011-10-19

申请号：EP06702108

申请日：2006-01-05

申请人： TOKYO ELECTRON LTD

发明人： KOBAYASHI TAKASHI ,  FURUI SHINGO ,  KITAGAWA JUNICHI

IPC分类号： H01L21/316 ,  H01J37/32 ,  H01L27/14 ,  H05H1/46

CPC分类号： C23C8/36 ,  H01J37/32192 ,  H01J37/32935 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/31662

公开(公告)号：EP1786030A4

公开(公告)日：2011-06-29

申请号：EP05781277

申请日：2005-08-30

申请人： TOKYO ELECTRON LTD

发明人： KOBAYASHI TAKASHI ,  KITAGAWA JUNICHI

IPC分类号： H01L21/316 ,  H01L21/318 ,  H01L21/336 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/786 ,  H01L29/788 ,  H01L29/792

CPC分类号： H01L21/31612 ,  H01J37/32192 ,  H01J37/32935 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/28273 ,  H01L21/28282 ,  H01L21/32105

公开(公告)号：EP1191582A4

公开(公告)日：2004-09-22

申请号：EP00906705

申请日：2000-03-06

申请人： TOKYO ELECTRON LTD

发明人： YOSHITAKA HIKARU ,  KATO YOSHIHIRO ,  KOBAYASHI TAKASHI

IPC分类号： C23C16/32 ,  C23C16/34 ,  C23C16/36 ,  H01L21/311 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  H01L21/768 ,  H01L21/3205

CPC分类号： H01L21/3148 ,  C23C16/325 ,  C23C16/345 ,  C23C16/36 ,  H01L21/31144 ,  H01L21/31629 ,  H01L21/31633 ,  H01L21/318 ,  H01L21/3185 ,  H01L21/76801 ,  H01L21/76802

摘要： An inorganic insulation film (103) consisting of SiC is formed on a fluoride-added carbon film (102) by a chemical vapor growth method using SiF4 and C2H4 as a source gas. Use of SiF4 and CF4 not containing hydrogen (H) as a source gas can prevent H from being brought into the inorganic insulation film (103) forming a hard mask (113); therefore, H diffused outward from the inorganic film (103) combines with fluorine (F) in the fluorine-added carbon film (102) to form HF, which HF prevents the corrosion of the inorganic film (103) and the like. Accordingly, adhesiveness between the hard mask (113) formed of the inorganic insulation film (103) and another layer such as the fluorine-added carbon film (102) can be prevented from deteriorating.

公开(公告)号：EP1154466A4

公开(公告)日：2003-08-27

申请号：EP00901898

申请日：2000-01-26

申请人： TOKYO ELECTRON LTD

发明人： AMANO HIDEAKI ,  ISHIZUKA SHUICHI ,  KOBAYASHI TAKASHI ,  TSUBOI KYO

IPC分类号： C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  C23C16/511 ,  H01J37/32 ,  H01L21/00 ,  H01L21/205

CPC分类号： H01L21/67103 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/50 ,  C23C16/511 ,  H01J37/32192 ,  H01J2237/2001 ,  H01L21/67069

摘要： Temperature adjustment means is buried near the upper surface of a ring structure that has substantially the same height as a wafer stage and surrounds it. The temperature adjustment means is controlled by a temperature control unit (61) according to a recipe for the process conditions so that the temperature of the wafer surface and the upper surface of the ring structure may become uniform. This minimizes the difference between temperatures above the wafer and above the ring structure, resulting in uniform deposition of film.

摘要翻译： 温度调节装置被埋在围绕用于半导体晶片的台的环件的上部，并且具有与该台相同的高度。 温度调节装置由环状件温度控制器61根据用于设定工艺条件的配方以使得晶片的表面和环形部件的上表面的温度均匀的方式控制， 分别。 此时，晶片上方和环状构件的上表面之间的温度差变小，能够形成均匀性较高的膜。