本发明的课题是在于提供可谋求其特性的提升之SRAM的单元布局。其解决手段系以具有下列构成的方式构成SRAM，一体的第1活性区域(AcP1)，其系配置有第1晶体管(TND1)及第5晶体管(TNA1)；第2活性区域(AcP2)，其系与第1活性区域(AcP1)分离，配置有第2晶体管(TND2)；一体的第3活性区域(AcP3)，其系配置有第3晶体管(TND3)及第6晶体管(TNA2)；及第4活性区域(AcP4)，其系与第3活性区域(AcP3)分离，配置有第4晶体管(TND4)，且，将驱动器晶体管分割(TND1及TND2，TND3及TND4)，配置于不同的活性区域(AcP2及AcP1，AcP4及AcP3)上。

A semiconductor device having an SRAM which includes: a monolithic first active region in which a first transistor and a fifth transistor are disposed; a second active region separated from the first active region, in which a second transistor is disposed; a monolithic third active region in which a third transistor and a sixth transistor are disposed; and a fourth active region separated from the third active region, in which a fourth transistor is disposed. Each driver transistor is divided into a first transistor and a second transistor (or a third transistor and a fourth transistor) and these driver transistors are disposed over different active regions.