- 专利标题: Semiconductor substrate structure, semiconductor package and method of manufacturing the same
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申请号: US14667317申请日: 2015-03-24
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公开(公告)号: US10002843B2公开(公告)日: 2018-06-19
- 发明人: Tien-Szu Chen , Kuang-Hsiung Chen , Sheng-Ming Wang , Yu-Ying Lee
- 申请人: Advanced Semiconductor Engineering, Inc.
- 申请人地址: TW Kaosiung
- 专利权人: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
- 当前专利权人: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
- 当前专利权人地址: TW Kaosiung
- 代理机构: Foley & Lardner LLP
- 代理商 Cliff Z. Liu
- 主分类号: H01L23/48
- IPC分类号: H01L23/48 ; H01L23/498 ; H01L23/52 ; H01L23/31 ; H05K3/20 ; H01L23/00 ; H05K1/11 ; H05K3/10
摘要:
The present disclosure relates to a semiconductor substrate structure, semiconductor package and method of manufacturing the same. The semiconductor substrate structure includes a conductive structure and a dielectric structure. The conductive structure has a first conductive surface and a second conductive surface opposite to the first conductive surface. The dielectric structure covers at least a portion of the conductive structure, and has a first dielectric surface and a second dielectric surface opposite to the first dielectric surface. The first conductive surface does not protrude from the first dielectric surface, and the second conductive surface is recessed from the second dielectric surface. The dielectric structure includes, or is formed from, a photo-sensitive resin, and the dielectric structure defines a dielectric opening in the second dielectric surface to expose a portion of the second conductive surface.
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