Invention Grant
- Patent Title: Memory cell and manufacturing method thereof
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Application No.: US14220122Application Date: 2014-03-19
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Publication No.: US10020385B2Publication Date: 2018-07-10
- Inventor: Yi-Shan Chiu , Shen-De Wang , Zhen Chen , Yuan-Hsiang Chang , Chih-Chien Chang , Jianjun Yang , Wei Ta
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Main IPC: H01L29/792
- IPC: H01L29/792 ; H01L29/66 ; H01L29/423 ; H01L27/1157
Abstract:
The present invention provides a memory cell, which includes a substrate, a gate dielectric layer, a patterned material layer, a selection gate and a control gate. The gate dielectric layer is disposed on the substrate. The patterned material layer is disposed on the substrate, wherein the patterned material layer comprises a vertical portion and a horizontal portion. The selection gate is disposed on the gate dielectric layer and atone side of the vertical portion of the patterned material layer. The control gate is disposed on the horizontal portion of the patterned material layer and at another side of the vertical portion, wherein the vertical portion protrudes over a top of the selection gate. The present invention further provides another embodiment of a memory cell and manufacturing methods thereof.
Public/Granted literature
- US20150270277A1 Memory Cell and Manufacturing Method Thereof Public/Granted day:2015-09-24
Information query
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