Invention Grant
- Patent Title: Manufacturing method of semiconductor device using peeling
-
Application No.: US14717055Application Date: 2015-05-20
-
Publication No.: US10032671B2Publication Date: 2018-07-24
- Inventor: Eiji Sugiyama , Yoshitaka Dozen , Yumiko Ohno , Hideaki Kuwabara , Shunpei Yamazaki
- Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2005-056308 20050301
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/84 ; H01L21/78 ; H01L21/67 ; H01L27/12 ; H01L21/311 ; H01L21/77

Abstract:
The present invention has an object to perform a peeling treatment in a short time. Peeling is performed while a peeling layer is exposed to an atmosphere of an etching gas. Alternatively, peeling is performed while an etching gas for a peeling layer is blown to the peeling layer in an atmosphere of an etching gas. Specifically, an etching gas is blown to a part to be peeled while a layer to be peeled is torn off from a substrate. Alternatively, peeling is performed in an etchant for a peeling layer while supplying an etchant to the peeling layer.
Public/Granted literature
- US20150255348A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2015-09-10
Information query
IPC分类: