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    Semiconductor device and manufacturing method thereof
    2.
    发明授权
    Semiconductor device and manufacturing method thereof 有权
    半导体装置及其制造方法

    公开(公告)号：US09059098B2

    公开(公告)日：2015-06-16

    申请号：US14050634

    申请日：2013-10-10

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Takuya Tsurume ,  Yoshitaka Dozen

    IPC: H01L21/44 ,  H01L21/304 ,  H01L27/12 ,  H01L27/13 ,  H01L29/78 ,  H01L29/786

    CPC classification number: H01L27/124 ,  H01L21/304 ,  H01L21/76898 ,  H01L27/1218 ,  H01L27/1266 ,  H01L27/13 ,  H01L29/78 ,  H01L29/78603 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: It is an object of the present invention to provide a semiconductor device where, even in a case of stacking a plurality of semiconductor elements provided over a substrate, the stacked semiconductor elements can be electrically connected through the substrate, and a manufacturing method thereof. According to one feature of the present invention, a method for manufacturing a semiconductor device includes the steps of selectively forming a depression in an upper surface of a substrate or forming an opening which penetrates the upper surface through a back surface; forming an element group having a transistor so as to cover the upper surface of the substrate and the depression, or the opening; and exposing the element group formed in the depression or the opening by thinning the substrate from the back surface. A means for thinning the substrate can be performed by partially removing the substrate by performing grinding treatment, polishing treatment, etching by chemical treatment, or the like from the back surface of the substrate.

    Abstract translation: 本发明的目的是提供一种半导体器件，其中即使在堆叠设置在衬底上的多个半导体元件的情况下，堆叠的半导体元件也可以通过衬底电连接及其制造方法。 根据本发明的一个特征，一种制造半导体器件的方法包括以下步骤：在衬底的上表面中选择性地形成凹陷或形成通过背面穿透上表面的开口; 形成具有晶体管以覆盖基板的上表面和凹陷或开口的元件组; 以及通过使基板从后表面变薄而暴露出形成在凹陷或开口中的元件组。 可以通过从基板的背面进行研磨处理，研磨处理，化学处理等的蚀刻等部分去除基板来进行薄板化的方法。

    Semiconductor device and manufacturing method thereof
    3.
    发明授权
    Semiconductor device and manufacturing method thereof 有权
    半导体装置及其制造方法

    公开(公告)号：US08928131B2

    公开(公告)日：2015-01-06

    申请号：US13961197

    申请日：2013-08-07

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Hidekazu Takahashi ,  Daiki Yamada ,  Kyosuke Ito ,  Eiji Sugiyama ,  Yoshitaka Dozen

    IPC: H01L23/66 ,  H01L23/498

    CPC classification number: H01L23/66 ,  H01L23/49855 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: The semiconductor device of the invention includes a transistor, an insulating layer provided over the transistor, a first conductive layer (corresponding to a source wire or a drain wire) electrically connected to a source region or a drain region of the transistor through an opening portion provided in the insulating layer, a first resin layer provided over the insulating layer and the first conductive layer, a layer containing conductive particles which is electrically connected to the first conductive layer through an opening portion provided in the first resin layer, and a substrate provided with a second resin layer and a second conductive layer serving as an antenna. In the semiconductor device having the above-described structure, the second conductive layer is electrically connected to the first conductive layer with the layer containing conductive particles interposed therebetween. In addition, the second resin layer is provided over the first resin layer.

    Abstract translation: 本发明的半导体器件包括晶体管，设置在晶体管上的绝缘层，通过开口部分电连接到晶体管的源极区域或漏极区域的第一导电层（对应于源极线或漏极线） 设置在所述绝缘层中的第一树脂层，设置在所述绝缘层和所述第一导电层上的第一树脂层，包含通过设置在所述第一树脂层中的开口部与所述第一导电层电连接的导电粒子的层和设置在所述第一树脂层上的基板 具有第二树脂层和用作天线的第二导电层。 在具有上述结构的半导体器件中，第二导电层与第一导电层电连接，其间含有导电粒子的层。 此外，第二树脂层设置在第一树脂层上。

    Semiconductor device and manufacturing method of semiconductor device
    9.
    发明授权
    Semiconductor device and manufacturing method of semiconductor device 有权
    半导体器件及半导体器件的制造方法

    公开(公告)号：US08648439B2

    公开(公告)日：2014-02-11

    申请号：US13865365

    申请日：2013-04-18

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Yoshitaka Dozen ,  Tomoyuki Aoki ,  Hidekazu Takahashi ,  Daiki Yamada ,  Eiji Sugiyama ,  Kaori Ogita ,  Naoto Kusumoto

    IPC: H01L29/06

    CPC classification number: H01L23/293 ,  H01L23/49855 ,  H01L23/66 ,  H01L27/1248 ,  H01L27/1266 ,  H01L27/13 ,  H01L28/10 ,  H01L2223/6677 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

    Abstract: The present invention provides a thin and bendable semiconductor device utilizing an advantage of a flexible substrate used in the semiconductor device, and a method of manufacturing the semiconductor device. The semiconductor device has at least one surface covered by an insulating layer which serves as a substrate for protection. In the semiconductor device, the insulating layer is formed over a conductive layer serving as an antenna such that the value in the thickness ratio of the insulating layer in a portion not covering the conductive layer to the conductive layer is at least 1.2, and the value in the thickness ratio of the insulating layer formed over the conductive layer to the conductive layer is at least 0.2. Further, not the conductive layer but the insulating layer is exposed in the side face of the semiconductor device, and the insulating layer covers a TFT and the conductive layer.

    Abstract translation: 本发明提供了利用半导体器件中使用的柔性衬底的优点的薄且可弯曲的半导体器件以及半导体器件的制造方法。 半导体器件具有被绝缘层覆盖的至少一个表面，该绝缘层用作用于保护的衬底。 在半导体器件中，绝缘层形成在用作天线的导电层上，使得不覆盖导电层的部分中的绝缘层的厚度比值至少为1.2，并且该值 在导电层上形成的绝缘层与导电层的厚度比为至少0.2。 此外，导电层而不是绝缘层不会在半导体器件的侧面露出，并且绝缘层覆盖TFT和导电层。

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