公开(公告)号：US11196020B2

公开(公告)日：2021-12-07

申请号：US16914735

申请日：2020-06-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toru Takayama ,  Junya Maruyama ,  Yumiko Ohno

IPC: H01L51/52 ,  H01L27/12 ,  H01L27/32 ,  H01L51/56 ,  H01L29/786 ,  H01L51/00

Abstract: To realize a high-performance liquid crystal display device or light-emitting element using a plastic film. A CPU is formed over a first glass substrate and then, separated from the first substrate. A pixel portion having a light-emitting element is formed over a second glass substrate, and then, separated from the second substrate. The both are bonded to each other. Therefore, high integration can be achieved. Further, in this case, the separated layer including the CPU serves also as a sealing layer of the light-emitting element.

公开(公告)号：US10032671B2

公开(公告)日：2018-07-24

申请号：US14717055

申请日：2015-05-20

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Eiji Sugiyama ,  Yoshitaka Dozen ,  Yumiko Ohno ,  Hideaki Kuwabara ,  Shunpei Yamazaki

IPC: H01L21/00 ,  H01L21/84 ,  H01L21/78 ,  H01L21/67 ,  H01L27/12 ,  H01L21/311 ,  H01L21/77

Abstract: The present invention has an object to perform a peeling treatment in a short time. Peeling is performed while a peeling layer is exposed to an atmosphere of an etching gas. Alternatively, peeling is performed while an etching gas for a peeling layer is blown to the peeling layer in an atmosphere of an etching gas. Specifically, an etching gas is blown to a part to be peeled while a layer to be peeled is torn off from a substrate. Alternatively, peeling is performed in an etchant for a peeling layer while supplying an etchant to the peeling layer.

公开(公告)号：US09927653B2

公开(公告)日：2018-03-27

申请号：US14645469

申请日：2015-03-12

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Akio Yamashita ,  Yumiko Ohno ,  Yuugo Goto

IPC: G02F1/1335 ,  G02B5/20 ,  G02B5/22 ,  B32B37/12 ,  B32B37/24 ,  B32B38/10

CPC classification number: G02F1/133516 ,  B32B37/12 ,  B32B37/24 ,  B32B38/10 ,  B32B2037/243 ,  B32B2457/202 ,  B32B2551/00 ,  G02B5/201 ,  G02B5/223

Abstract: To provide a method of manufacturing an optical film formed on a plastic substrate. There is provided a method of manufacturing an optical film including the steps of laminating a separation layer and an optical filter on a first substrate, separating the optical filter from the first substrate, attaching the optical filter to a second substrate. Since the optical film manufactured according to the invention has flexibility, it can be provided on a portion or a display device having a curved surface. Further, the optical film is not processed at high temperatures, and hence, an optical film having high yield with high reliability can be formed. Furthermore, an optical film having an excellent impact resistance property can be formed.

公开(公告)号：US09543337B2

公开(公告)日：2017-01-10

申请号：US14961043

申请日：2015-12-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junya Maruyama ,  Toru Takayama ,  Yumiko Ohno ,  Shunpei Yamazaki

IPC: H01L27/12 ,  H01L29/786

CPC classification number: H01L27/1218 ,  H01L21/76251 ,  H01L27/1214 ,  H01L27/1248 ,  H01L27/1266 ,  H01L29/78603 ,  H01L33/24 ,  H01L33/44 ,  H01L33/56 ,  H01L33/62 ,  H01L2221/68368

Abstract: A substrate and a delamination film are separated by a physical means, or a mechanical means in a state where a metal film formed over a substrate, and a delamination layer comprising an oxide film including the metal and a film comprising silicon, which is formed over the metal film, are provided. Specifically, a TFT obtained by forming an oxide layer including the metal over a metal film; crystallizing the oxide layer by heat treatment; and performing delamination in a layer of the oxide layer or at both of the interface of the oxide layer is formed.

Abstract translation: 在基板上形成金属膜的状态下，通过物理手段或机械装置分离基板和分层膜，以及包含包含金属的氧化物膜和包含硅的膜的分层，其形成在 提供金属膜。 具体地说，通过在金属膜上形成包含金属的氧化物层而获得的TFT; 通过热处理使氧化层结晶; 并且在氧化物层的一层或氧化物层的界面上形成分层。

公开(公告)号：US09013650B2

公开(公告)日：2015-04-21

申请号：US14450927

申请日：2014-08-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno

IPC: G02F1/136 ,  H01L21/70 ,  H01L27/12 ,  H01L27/32 ,  H01L29/786 ,  H01L51/00 ,  H01L51/56 ,  H01L21/02 ,  H01L21/28 ,  H01L21/324 ,  H01L21/425 ,  H01L21/8234 ,  H01L27/15 ,  H01L33/00

CPC classification number: H01L27/1218 ,  H01L21/02175 ,  H01L21/28008 ,  H01L21/324 ,  H01L21/425 ,  H01L21/707 ,  H01L21/823487 ,  H01L27/1214 ,  H01L27/1266 ,  H01L27/156 ,  H01L27/3244 ,  H01L29/78603 ,  H01L33/005 ,  H01L33/0054 ,  H01L51/003 ,  H01L51/56 ,  H01L2221/68368 ,  H01L2227/326 ,  H01L2933/0016

Abstract: The present invention provides a simplifying method for a peeling process as well as peeling and transcribing to a large-size substrate uniformly. A feature of the present invention is to peel a first adhesive and to cure a second adhesive at the same time in a peeling process, thereby to simplify a manufacturing process. In addition, the present invention is to devise the timing of transcribing a peel-off layer in which up to an electrode of a semiconductor are formed to a predetermined substrate. In particular, a feature is that peeling is performed by using a pressure difference in the case that peeling is performed with a state in which plural semiconductor elements are formed on a large-size substrate.

Abstract translation: 本发明提供了一种剥离方法的简化方法以及均匀地剥离和转录到大尺寸基板。 本发明的一个特征是剥离第一粘合剂并在剥离过程中同时固化第二粘合剂，从而简化制造过程。 另外，本发明是为了将形成半导体的电极的剥离层转印为规定的基板的时机。 特别地，特征在于，在大尺寸基板上形成有多个半导体元件的状态下进行剥离的情况下，通过使用压差来进行剥离。

公开(公告)号：US10038012B2

公开(公告)日：2018-07-31

申请号：US15397045

申请日：2017-01-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junya Maruyama ,  Toru Takayama ,  Yumiko Ohno ,  Shunpei Yamazaki

IPC: H01L27/12 ,  H01L33/56 ,  H01L33/62 ,  H01L29/786 ,  H01L33/24 ,  H01L33/44 ,  H01L21/762

CPC classification number: H01L27/1218 ,  H01L21/76251 ,  H01L27/1214 ,  H01L27/1248 ,  H01L27/1266 ,  H01L29/78603 ,  H01L33/24 ,  H01L33/44 ,  H01L33/56 ,  H01L33/62 ,  H01L2221/68368

Abstract: A substrate and a delamination film are separated by a physical means, or a mechanical means in a state where a metal film formed over a substrate, and a delamination layer comprising an oxide film including the metal and a film comprising silicon, which is formed over the metal film, are provided. Specifically, a TFT obtained by forming an oxide layer including the metal over a metal film; crystallizing the oxide layer by heat treatment; and performing delamination in a layer of the oxide layer or at both of the interface of the oxide layer is formed.

公开(公告)号：US09299879B2

公开(公告)日：2016-03-29

申请号：US14662551

申请日：2015-03-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno

IPC: G02F1/136 ,  H01L33/00 ,  H01L27/12 ,  H01L27/32 ,  H01L29/786 ,  H01L51/00 ,  H01L51/56 ,  H01L21/02 ,  H01L21/28 ,  H01L21/324 ,  H01L21/425 ,  H01L21/70 ,  H01L21/8234 ,  H01L27/15

CPC classification number: H01L27/1218 ,  H01L21/02175 ,  H01L21/28008 ,  H01L21/324 ,  H01L21/425 ,  H01L21/707 ,  H01L21/823487 ,  H01L27/1214 ,  H01L27/1266 ,  H01L27/156 ,  H01L27/3244 ,  H01L29/78603 ,  H01L33/005 ,  H01L33/0054 ,  H01L51/003 ,  H01L51/56 ,  H01L2221/68368 ,  H01L2227/326 ,  H01L2933/0016

Abstract: The present invention provides a simplifying method for a peeling process as well as peeling and transcribing to a large-size substrate uniformly. A feature of the present invention is to peel a first adhesive and to cure a second adhesive at the same time in a peeling process, thereby to simplify a manufacturing process. In addition, the present invention is to devise the timing of transcribing a peel-off layer in which up to an electrode of a semiconductor are formed to a predetermined substrate. In particular, a feature is that peeling is performed by using a pressure difference in the case that peeling is performed with a state in which plural semiconductor elements are formed on a large-size substrate.

公开(公告)号：US09224667B2

公开(公告)日：2015-12-29

申请号：US13857195

申请日：2013-04-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yumiko Ohno

IPC: H01L29/04 ,  H01L23/29 ,  H01L27/12 ,  H01L29/786 ,  H01L51/00 ,  H01L29/66

CPC classification number: H01L27/1218 ,  H01L23/291 ,  H01L27/1214 ,  H01L27/1266 ,  H01L27/3244 ,  H01L29/66757 ,  H01L29/78603 ,  H01L51/0002 ,  H01L51/0021 ,  H01L51/0024 ,  H01L51/003 ,  H01L2221/68368 ,  H01L2924/0002 ,  Y10S438/928 ,  Y10S438/982 ,  H01L2924/00

Abstract: It is an object of the present invention to provide a peeling method that causes no damage to a layer to be peeled and to allow not only a layer to be peeled with a small surface area but also a layer to be peeled with a large surface area to be peeled entirely. Further, it is also an object of the present invention to bond a layer to be peeled to various base materials to provide a lighter semiconductor device and a manufacturing method thereof. Particularly, it is an object to bond various elements typified by a TFT, (a thin film diode, a photoelectric conversion element comprising a PIN junction of silicon, or a silicon resistance element) to a flexible film to provide a lighter semiconductor device and a manufacturing method thereof.

Abstract translation: 本发明的目的是提供一种不会对被剥离层造成损伤的剥离方法，并且不仅使表面积小的层被剥离，而且还允许具有大的表面积的被剥离层 要完全去皮。 此外，本发明的另一个目的是将要剥离的层粘合到各种基材上以提供更轻的半导体器件及其制造方法。 特别地，目的是将由TFT表示的各种元素（薄膜二极管，包含硅的PIN结的光电转换元件或硅电阻元件）粘合到柔性膜上以提供更轻的半导体器件和 其制造方法。

公开(公告)号：US20140001626A1

公开(公告)日：2014-01-02

申请号：US14010735

申请日：2013-08-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yumiko Ohno

IPC: H01L23/12

CPC classification number: H01L23/12 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/1266 ,  H01L27/3244 ,  H01L27/3281 ,  H01L29/78603 ,  H01L51/003 ,  H01L51/0097 ,  H01L51/524 ,  H01L51/529 ,  H01L51/56 ,  H01L2221/68368 ,  H01L2227/326 ,  H01L2251/5338 ,  H01L2924/0002 ,  Y02E10/549 ,  Y02P70/521 ,  H01L2924/00

Abstract: It is an object of the present invention to provide a semiconductor device capable of preventing deterioration due to penetration of moisture or oxygen, for example, a light-emitting apparatus having an organic light-emitting device that is formed over a plastic substrate, and a liquid crystal display apparatus using a plastic substrate. According to the present invention, devices formed on a glass substrate or a quartz substrate (a TFT, a light-emitting device having an organic compound, a liquid crystal device, a memory device, a thin-film diode, a pin-junction silicon photoelectric converter, a silicon resistance element, or the like) are separated from the substrate, and transferred to a plastic substrate having high thermal conductivity.

Abstract translation: 本发明的目的是提供一种能够防止由于水分或氧气的渗透引起的劣化的半导体器件，例如具有形成在塑料基板上的有机发光器件的发光装置，以及 使用塑料基板的液晶显示装置。 根据本发明，形成在玻璃基板或石英基板（TFT，具有有机化合物的发光器件，液晶器件，存储器件，薄膜二极管，pin-junction硅 光电转换器，硅电阻元件等）与衬底分离，并转移到具有高导热性的塑料衬底。

公开(公告)号：US10727437B2

公开(公告)日：2020-07-28

申请号：US16251144

申请日：2019-01-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toru Takayama ,  Junya Maruyama ,  Yumiko Ohno

IPC: H01L51/52 ,  H01L27/12 ,  H01L27/32 ,  H01L51/56 ,  H01L29/786 ,  H01L51/00

Abstract: To realize a high-performance liquid crystal display device or light-emitting element using a plastic film. A CPU is formed over a first glass substrate and then, separated from the first substrate. A pixel portion having a light-emitting element is formed over a second glass substrate, and then, separated from the second substrate. The both are bonded to each other. Therefore, high integration can be achieved. Further, in this case, the separated layer including the CPU serves also as a sealing layer of the light-emitting element.