发明授权
- 专利标题： Junction interlayer dielectric for reducing leakage current in semiconductor devices
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申请号： US15450649申请日： 2017-03-06
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公开(公告)号： US10038057B2公开(公告)日： 2018-07-31
- 发明人: Joel P. de Souza , Keith E. Fogel , Jeehwan Kim , Devendra K. Sadana , Brent A. Wacaser
- 申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Tutunjian & Bitetto, P.C.
- 代理商 Louis J. Percello
- 主分类号： H01L29/68
- IPC分类号： H01L29/68 ; H01L29/43 ; H01L29/08 ; H01L29/267 ; H01L29/78 ; H01L29/66 ; H01L29/868 ; H01L29/861 ; H01L29/06
摘要：
A semiconductor device includes a substrate and a p-doped layer including a doped III-V material on the substrate. A dielectric interlayer is formed on the p-doped layer. An n-type layer is formed on the dielectric interlayer, the n-type layer including a high band gap II-VI material to form an electronic device.
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