Invention Grant
- Patent Title: Voltage-nonlinear resistor element and method for producing the same
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Application No.: US15468630Application Date: 2017-03-24
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Publication No.: US10043604B2Publication Date: 2018-08-07
- Inventor: Masaki Ishikawa , Toru Hayase , Yoshimasa Kobayashi , Kenji Morimoto
- Applicant: NGK INSULATORS, LTD.
- Applicant Address: JP Nagoya
- Assignee: NGK Insulators, Ltd.
- Current Assignee: NGK Insulators, Ltd.
- Current Assignee Address: JP Nagoya
- Agency: Burr & Brown, PLLC
- Priority: JP2016-063624 20160328
- Main IPC: H01C7/18
- IPC: H01C7/18 ; H01C17/30 ; H01C7/102 ; H01C7/112 ; C04B35/453

Abstract:
A voltage-nonlinear resistor element 10 includes a voltage-nonlinear resistor (referred simply as “resistor”) 20 and a pair of electrodes 14 and 16 between which the resistor 20 is interposed. The resistor 20 has a multilayer structure including a first layer 21 composed primarily of zinc oxide, a second layer 22 composed primarily of zinc oxide, and a third layer 23 composed primarily of a metal oxide other than zinc oxide. The second layer 22 is adjacent to the first layer 21 and has a smaller thickness and a higher volume resistivity than the first layer 21. The third layer 23 is adjacent to the second layer 22.
Public/Granted literature
- US20170278601A1 VOLTAGE-NONLINEAR RESISTOR ELEMENT AND METHOD FOR PRODUCING THE SAME Public/Granted day:2017-09-28
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