Invention Grant
- Patent Title: Solid-state imaging device, method of manufacturing the same, and electronic device
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Application No.: US15524185Application Date: 2015-10-29
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Publication No.: US10070086B2Publication Date: 2018-09-04
- Inventor: Takashi Oinoue
- Applicant: SONY CORPORATION
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sheridan Ross P.C.
- Priority: JP2014-229367 20141112
- International Application: PCT/JP2015/080483 WO 20151029
- International Announcement: WO2016/076125 WO 20160519
- Main IPC: H01L27/00
- IPC: H01L27/00 ; H01L31/00 ; H04N5/374 ; H04N5/345 ; H01L27/148 ; H01L27/146 ; H04N5/372 ; H04N3/14

Abstract:
The present disclosure relates to a solid-state imaging device capable of receiving light entering a gap between pixel regions of imaging units by the pixel region when a plurality of imaging units is arranged, a method of manufacturing the same, and an electronic device. A CMOS image sensor includes a pixel region formed of a plurality of pixels. A convex lens is provided for each of a plurality of CMOS image sensors. A plurality of CMOS image sensors is arranged on a supporting substrate. The present disclosure is applicable to a solid-state imaging device and the like in which a plurality of CMOS image sensors is arranged on the supporting substrate, for example.
Public/Granted literature
- US20170359541A1 SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICE Public/Granted day:2017-12-14
Information query
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