Invention Grant
- Patent Title: High-sensitivity electronic detector
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Application No.: US15251009Application Date: 2016-08-30
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Publication No.: US10074649B2Publication Date: 2018-09-11
- Inventor: Stephane Monfray , Gaspard Hiblot
- Applicant: STMicroelectronics (Crolles 2) SAS
- Applicant Address: FR Crolles
- Assignee: STMicroelectronics (Crolles 2) SAS
- Current Assignee: STMicroelectronics (Crolles 2) SAS
- Current Assignee Address: FR Crolles
- Agency: Crowe & Dunlevy
- Priority: FR1651570 20160225
- Main IPC: H01L27/07
- IPC: H01L27/07 ; G01N27/414 ; H01L27/06 ; H01L29/423 ; G01R19/165 ; G01N33/49

Abstract:
An integrated electronic detector operates to detecting a variation in potential on an input terminal. The detector includes a MOS transistor having a drain forming an output. Variation in drain current is representative of the variation in potential. A bipolar transistor has a base forming the input terminal and a collector electrically connected to the gate of the MOS transistor. The detector has a first configuration in which the bipolar transistor is conducting and the MOS transistor is turned off. The detector has a second configuration in which the bipolar transistor is turned off and the MOS transistor is in a sub-threshold operation. Transition of the detector from the first configuration to the second configuration occurs in response to the variation in potential.
Public/Granted literature
- US20170248543A1 HIGH-SENSITIVITY ELECTRONIC DETECTOR Public/Granted day:2017-08-31
Information query
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