公开(公告)号：US20170248543A1

公开(公告)日：2017-08-31

申请号：US15251009

申请日：2016-08-30

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Stephane Monfray ,  Gaspard Hiblot

IPC: G01N27/414 ,  H01L27/12 ,  H01L29/788 ,  H01L27/06 ,  H01L29/423

CPC classification number: H01L27/0722 ,  G01N27/414 ,  G01N27/4145 ,  G01N33/49 ,  G01R19/16519 ,  H01L27/0623 ,  H01L27/0705 ,  H01L27/1207 ,  H01L29/42356

Abstract: An integrated electronic detector operates to detecting a variation in potential on an input terminal. The detector includes a MOS transistor having a drain forming an output. Variation in drain current is representative of the variation in potential. A bipolar transistor has a base forming the input terminal and a collector electrically connected to the gate of the MOS transistor. The detector has a first configuration in which the bipolar transistor is conducting and the MOS transistor is turned off. The detector has a second configuration in which the bipolar transistor is turned off and the MOS transistor is in a sub-threshold operation. Transition of the detector from the first configuration to the second configuration occurs in response to the variation in potential.

公开(公告)号：US10074649B2

公开(公告)日：2018-09-11

申请号：US15251009

申请日：2016-08-30

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Stephane Monfray ,  Gaspard Hiblot

IPC: H01L27/07 ,  G01N27/414 ,  H01L27/06 ,  H01L29/423 ,  G01R19/165 ,  G01N33/49

CPC classification number: H01L27/0722 ,  G01N27/414 ,  G01N27/4145 ,  G01N33/49 ,  G01R19/16519 ,  H01L27/0623 ,  H01L27/0705 ,  H01L27/1207 ,  H01L29/42356

Abstract: An integrated electronic detector operates to detecting a variation in potential on an input terminal. The detector includes a MOS transistor having a drain forming an output. Variation in drain current is representative of the variation in potential. A bipolar transistor has a base forming the input terminal and a collector electrically connected to the gate of the MOS transistor. The detector has a first configuration in which the bipolar transistor is conducting and the MOS transistor is turned off. The detector has a second configuration in which the bipolar transistor is turned off and the MOS transistor is in a sub-threshold operation. Transition of the detector from the first configuration to the second configuration occurs in response to the variation in potential.