Invention Grant
- Patent Title: Semiconductor device with trench gate structure including a gate electrode and a contact structure for a diode region
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Application No.: US15057704Application Date: 2016-03-01
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Publication No.: US10074741B2Publication Date: 2018-09-11
- Inventor: Thomas Aichinger , Romain Esteve , Dethard Peters , Roland Rupp , Ralf Siemieniec
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater Matsil, LLP
- Priority: DE102015103072 20150303
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/739 ; H01L29/66 ; H01L29/08 ; H01L29/40 ; H01L29/417 ; H01L27/06 ; H01L29/872 ; H01L29/36 ; H01L29/861 ; H01L29/04 ; H01L29/06

Abstract:
A semiconductor device includes trench structures that extend from a first surface into a semiconductor body. The trench structures include a gate structure and a contact structure that extends through the gate structure, respectively. Transistor mesas are between the trench structures. Each transistor mesa includes a body zone forming a first pn junction with a drift structure and a second pn junction with a source zone. Diode regions directly adjoin one of the contact structures form a third pn junction with the drift structure, respectively.
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