The invention relates to a three dimensional magnetic memory device (1) employing pure spin currents to write information into magnetic bits. The magnetic memory device (1) is formed of one or more stack of two storage layers (13) placed between two reference layers (9). The stacks are connected to each other through common reference electrodes (12) formed by connecting reference electrodes (11) placed on bottom of a first stack and on top of the second stack positioned under the first stack.