公开(公告)号：US10079057B2

公开(公告)日：2018-09-18

申请号：US15782854

申请日：2017-10-13

申请人： Gokce Ozbay ,  Ozhan Ozatay

发明人： Gokce Ozbay ,  Ozhan Ozatay

IPC分类号： G11C11/30 ,  G11C11/56 ,  G11C11/16 ,  H01L43/04 ,  H01L43/10 ,  H01L43/14 ,  B82Y25/00 ,  B82Y10/00

CPC分类号： G11C11/5607 ,  B82Y10/00 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/222 ,  H01L43/04 ,  H01L43/08 ,  H01L43/10 ,  H01L43/14

摘要： The invention relates to a three dimensional magnetic memory device (1) employing pure spin currents to write information into magnetic bits. The magnetic memory device (1) is formed of one or more stack of two storage layers (13) placed between two reference layers (9). The stacks are connected to each other through common reference electrodes (12) formed by connecting reference electrodes (11) placed on bottom of a first stack and on top of the second stack positioned under the first stack.

公开(公告)号：US20180122460A1

公开(公告)日：2018-05-03

申请号：US15782854

申请日：2017-10-13

申请人： GOKCE OZBAY ,  OZHAN OZATAY

发明人： GOKCE OZBAY ,  OZHAN OZATAY

IPC分类号： G11C11/56 ,  G11C11/16 ,  H01L43/04 ,  H01L43/14 ,  H01L43/10

CPC分类号： G11C11/5607 ,  B82Y10/00 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1673 ,  G11C11/1675 ,  H01L43/04 ,  H01L43/10 ,  H01L43/14

摘要： The invention relates to a three dimensional magnetic memory device (1) employing pure spin currents to write information into magnetic bits. The magnetic memory device (1) is formed of one or more stack of two storage layers (13) placed between two reference layers (9). The stacks are connected to each other through common reference electrodes (12) formed by connecting reference electrodes (11) placed on bottom of a first stack and on top of the second stack positioned under the first stack.