公开(公告)号：US10079057B2

公开(公告)日：2018-09-18

申请号：US15782854

申请日：2017-10-13

Applicant: Gokce Ozbay ,  Ozhan Ozatay

Inventor： Gokce Ozbay ,  Ozhan Ozatay

IPC: G11C11/30 ,  G11C11/56 ,  G11C11/16 ,  H01L43/04 ,  H01L43/10 ,  H01L43/14 ,  B82Y25/00 ,  B82Y10/00

CPC classification number: G11C11/5607 ,  B82Y10/00 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/222 ,  H01L43/04 ,  H01L43/08 ,  H01L43/10 ,  H01L43/14

Abstract: The invention relates to a three dimensional magnetic memory device (1) employing pure spin currents to write information into magnetic bits. The magnetic memory device (1) is formed of one or more stack of two storage layers (13) placed between two reference layers (9). The stacks are connected to each other through common reference electrodes (12) formed by connecting reference electrodes (11) placed on bottom of a first stack and on top of the second stack positioned under the first stack.

公开(公告)号：US08164940B2

公开(公告)日：2012-04-24

申请号：US12638627

申请日：2009-12-15

Applicant: Ozhan Ozatay ,  Bruce D. Terris

Inventor： Ozhan Ozatay ,  Bruce D. Terris

IPC: G11C11/063

CPC classification number: H01L27/222 ,  G11C5/02 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C19/0808

Abstract: Read/write structures for three-dimensional memories are disclosed. In one embodiment, a three-dimensional memory includes a plurality of data storage layers fabricated in parallel on top of one another to form a three-dimensional structure. Each data storage layer is able to store bits of data in the form of magnetic domains. The memory further includes a column of write elements that is operable to write a column of magnetic domains to the first data storage layer representing a column of bits. The first data storage layer is patterned into a plurality of magnetic conductors aligned transverse to the column of write elements. A control system may inject spin-polarized current pulses in the magnetic conductors to transfer the column of magnetic domains laterally within the first data storage layer. The control system may transfer of the column of magnetic domains perpendicularly from the first data storage layer to another data storage layer.

Abstract translation: 公开了用于三维存储器的读/写结构。 在一个实施例中，三维存储器包括彼此之上并行制造的多个数据存储层，以形成三维结构。 每个数据存储层能够存储磁畴形式的数据位。 存储器还包括写入元件列，其可操作以将磁畴列写入表示位列的第一数据存储层。 将第一数据存储层图案化成横向于写入元件列的多个磁性导体。 控制系统可以在磁导体中注入自旋极化电流脉冲，以在第一数据存储层内横向磁转移磁畴列。 控制系统可以将磁畴列从第一数据存储层垂直传送到另一个数据存储层。

公开(公告)号：US09812202B2

公开(公告)日：2017-11-07

申请号：US14758193

申请日：2013-12-26

Applicant: Yemliha Bilal Kalyoncu ,  Ozhan Ozatay

Inventor： Yemliha Bilal Kalyoncu ,  Ozhan Ozatay

IPC: G11C7/00 ,  G11C13/04 ,  G11C13/06 ,  G11C5/02 ,  G11C19/08 ,  G11C19/30 ,  G11C11/16

CPC classification number: G11C13/06 ,  G11C5/02 ,  G11C11/161 ,  G11C11/1675 ,  G11C19/0841 ,  G11C19/30

Abstract: The present invention relates to a data storage system and a method which has high storing capacity and high data access rate and low power consumption. The said data storage system essentially includes at least two optical layers, and which have at least one active layer in which the light is generated, at least one lower electric contact enabling the electric energy to be transferred to the active layer and at least one upper electric contact, at least two reflecting layers reflecting the light generated in the active layer; at least one thermal insulator; at least one magnetic layer, which has at least one storage bit, at least one lower buffer bit, at least one upper buffer bit enabling the data to be transferred up; at least one transparent layer and transfers the light generated by the optical unit to the magnetic layer.

公开(公告)号：US20180122460A1

公开(公告)日：2018-05-03

申请号：US15782854

申请日：2017-10-13

Applicant: GOKCE OZBAY ,  OZHAN OZATAY

Inventor： GOKCE OZBAY ,  OZHAN OZATAY

IPC: G11C11/56 ,  G11C11/16 ,  H01L43/04 ,  H01L43/14 ,  H01L43/10

CPC classification number: G11C11/5607 ,  B82Y10/00 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1673 ,  G11C11/1675 ,  H01L43/04 ,  H01L43/10 ,  H01L43/14

Abstract: The invention relates to a three dimensional magnetic memory device (1) employing pure spin currents to write information into magnetic bits. The magnetic memory device (1) is formed of one or more stack of two storage layers (13) placed between two reference layers (9). The stacks are connected to each other through common reference electrodes (12) formed by connecting reference electrodes (11) placed on bottom of a first stack and on top of the second stack positioned under the first stack.

公开(公告)号：US20110141792A1

公开(公告)日：2011-06-16

申请号：US12638627

申请日：2009-12-15

Applicant: Ozhan Ozatay ,  Bruce D. Terris

Inventor： Ozhan Ozatay ,  Bruce D. Terris

IPC: G11C11/063 ,  H01L43/12

CPC classification number: H01L27/222 ,  G11C5/02 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C19/0808

Abstract: Read/write structures for three-dimensional memories are disclosed. In one embodiment, a three-dimensional memory includes a plurality of data storage layers fabricated in parallel on top of one another to form a three-dimensional structure. Each data storage layer is able to store bits of data in the form of magnetic domains. The memory further includes a column of write elements that is operable to write a column of magnetic domains to the first data storage layer representing a column of bits. The first data storage layer is patterned into a plurality of magnetic conductors aligned transverse to the column of write elements. A control system may inject spin-polarized current pulses in the magnetic conductors to transfer the column of magnetic domains laterally within the first data storage layer. The control system may transfer of the column of magnetic domains perpendicularly from the first data storage layer to another data storage layer.

Abstract translation: 公开了用于三维存储器的读/写结构。 在一个实施例中，三维存储器包括彼此之上并行制造的多个数据存储层，以形成三维结构。 每个数据存储层能够存储磁畴形式的数据位。 存储器还包括写入元件列，其可操作以将磁畴列写入表示位列的第一数据存储层。 将第一数据存储层图案化成横向于写入元件列的多个磁性导体。 控制系统可以在磁导体中注入自旋极化电流脉冲，以在第一数据存储层内横向磁转移磁畴列。 控制系统可以将磁畴列从第一数据存储层垂直传送到另一个数据存储层。

公开(公告)号：US20150357039A1

公开(公告)日：2015-12-10

申请号：US14758193

申请日：2013-12-26

Applicant: Yemliha Bilal KALYONCU ,  Ozhan Ozatay

Inventor： Yemliha Bilal KALYONCU ,  Ozhan OZATAY

IPC: G11C13/06

CPC classification number: G11C13/06 ,  G11C5/02 ,  G11C11/161 ,  G11C11/1675 ,  G11C19/0841 ,  G11C19/30

Abstract: The present invention relates to a data storage system and a method which has high storing capacity and high data access rate and low power consumption. The said data storage system essentially includes at least two optical layers, and which have at least one active layer in which the light is generated, at least one lower electric contact enabling the electric energy to be transferred to the active layer and at least one upper electric contact, at least two reflecting layers reflecting the light generated in the active layer; at least one thermal insulator; at least one magnetic layer, which has at least one storage bit, at least one lower buffer bit, at least one upper buffer bit enabling the data to be transferred up; at least one transparent layer and transfers the light generated by the optical unit to the magnetic layer.

Abstract translation: 本发明涉及具有高存储容量和高数据访问速率和低功耗的数据存储系统和方法。 所述数据存储系统基本上包括至少两个光学层，并且具有至少一个其中产生光的有源层，至少一个使电能转移到有源层的至少一个下部电触点和至少一个上部 电接触，反射在有源层中产生的光的至少两个反射层; 至少一个绝热体; 至少一个磁层，其具有至少一个存储位，至少一个下缓冲器位，至少一个上缓冲器位，使数据能够被上传; 至少一个透明层，并将由光学单元产生的光转移到磁性层。