Invention Grant
- Patent Title: Logic and flash field-effect transistors
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Application No.: US15366425Application Date: 2016-12-01
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Publication No.: US10079242B2Publication Date: 2018-09-18
- Inventor: Ralf Richter , Thomas Melde , Elke Erben
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Thompson Hine LLP
- Agent Yuanmin Cai
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L27/11568 ; H01L21/28 ; H01L21/02 ; H01L29/51 ; H01L29/06 ; H01L27/11573 ; H01L21/033 ; H01L21/84 ; H01L27/12
Abstract:
Methods of forming a device structure for a field-effect transistor and device structures for a field-effect transistor. A first gate dielectric layer is formed on a semiconductor layer in a first area. A hardmask layer is formed on the first gate dielectric layer in the first area of the semiconductor layer. A gate stack layer is formed on the semiconductor layer in a second area and on the hardmask layer in the first area of the semiconductor layer. The hardmask layer separates the gate stack layer from the first gate dielectric layer on the first area of the semiconductor layer.
Public/Granted literature
- US20180158835A1 LOGIC AND FLASH FIELD-EFFECT TRANSISTORS Public/Granted day:2018-06-07
Information query
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