Invention Grant
- Patent Title: Magnetoresistance effect element
-
Application No.: US15559195Application Date: 2016-03-28
-
Publication No.: US10109788B2Publication Date: 2018-10-23
- Inventor: Tomoyuki Sasaki , Tatsuo Shibata , Katsuyuki Nakada , Yoshitomo Tanaka
- Applicant: TDK CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TDK CORPORATION
- Current Assignee: TDK CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JP2015-071414 20150331
- International Application: PCT/JP2016/059949 WO 20160328
- International Announcement: WO2016/158867 WO 20161006
- Main IPC: H01L45/00
- IPC: H01L45/00 ; H01L43/08 ; G11C11/16 ; H01L43/02 ; H01L27/22 ; H01L43/12 ; H01L43/10
Abstract:
A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and the tunnel barrier layer has a spinel structure in which cations are disordered, and contains a divalent cation of a non-magnetic element, a trivalent cation of a non-magnetic element, oxygen, and one of nitrogen and fluorine.
Public/Granted literature
- US20180083186A1 MAGNETORESISTANCE EFFECT ELEMENT Public/Granted day:2018-03-22
Information query
IPC分类:
