- 专利标题： Semiconductor substrate polishing methods and slurries and methods for manufacturing silicon on insulator structures
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申请号： US15221839申请日： 2016-07-28
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公开(公告)号： US10128146B2公开(公告)日： 2018-11-13
- 发明人: Hui Wang , Vandan Tanna , Tracy Michelle Ragan , James Raymond Capstick
- 申请人： SunEdison Semiconductor Limited (UEN201334164H)
- 申请人地址： TW
- 专利权人： GlobalWafers Co., Ltd.
- 当前专利权人： GlobalWafers Co., Ltd.
- 当前专利权人地址： TW
- 代理机构： Armstrong Teasdale LLP
- 主分类号： H01L21/762
- IPC分类号： H01L21/762 ; H01L21/306 ; C09G1/02 ; C09K3/14 ; H01L21/02 ; G09G1/02
摘要：
Polishing slurries for polishing semiconductor substrates are disclosed. The polishing slurry may include first and second sets of colloidal silica particles with the second set having a silica content greater than the first set.
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