Invention Grant
- Patent Title: Light emitting diode chip having distributed bragg reflector and method of fabricating the same
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Application No.: US15401599Application Date: 2017-01-09
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Publication No.: US10128306B2Publication Date: 2018-11-13
- Inventor: Sum Geun Lee , Sang Ki Jin , Jin Cheol Shin , Jong Kyu Kim , So Ra Lee , Chung Hoon Lee
- Applicant: Seoul Viosys Co., Ltd.
- Applicant Address: KR Ansan-si
- Assignee: Seoul Viosys Co., Ltd.
- Current Assignee: Seoul Viosys Co., Ltd.
- Current Assignee Address: KR Ansan-si
- Agency: H.C. Park & Associates, PLC
- Priority: KR10-2009-0109870 20091113; KR10-2010-0013166 20100212; KR10-2010-0115347 20101119
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L27/15 ; H01L33/46 ; H01L33/22 ; H01L33/50 ; H01L33/60 ; H01L33/62 ; H01L33/06 ; H01L33/32 ; H01L33/42

Abstract:
A light-emitting diode package including a body and leads. The body comprising a mounting surface. The light emitting diode package also includes a light emitting diode chip including a substrate and a plurality of light emitting cells disposed on the substrate and positioned to be spaced apart from each other, each of the plurality of light emitting cells comprising an active layer disposed between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer. The light emitting diode package also includes a phosphor member disposed on the light-emitting diode chip and a distributed Bragg reflector disposed on the substrate and between the plurality of light emitting cells.
Public/Granted literature
- US20170148845A1 LIGHT EMITTING DIODE CHIP HAVING DISTRIBUTED BRAGG REFLECTOR AND METHOD OF FABRICATING THE SAME Public/Granted day:2017-05-25
Information query
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