公开(公告)号：US09324919B2

公开(公告)日：2016-04-26

申请号：US14590493

申请日：2015-01-06

Applicant: Seoul Viosys Co., Ltd.

Inventor： Sum Geun Lee ,  Sang Ki Jin ,  Jin Cheol Shin ,  Jong Kyu Kim ,  So Ra Lee ,  Chung Hoon Lee

IPC: H01L33/00 ,  H01L33/46 ,  H01L27/15 ,  H01L33/22 ,  H01L33/50 ,  H01L33/60

CPC classification number: H01L27/153 ,  H01L33/0008 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/22 ,  H01L33/32 ,  H01L33/42 ,  H01L33/46 ,  H01L33/505 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2933/0025 ,  H01L2933/0033 ,  H01L2933/0041 ,  H01L2933/0058 ,  H01L2924/00014

Abstract: A light emitting diode chip including a substrate, a light emitting structure arranged on the substrate, the light emitting structure including an active layer arranged between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer, and a distributed Bragg reflector to reflect light emitted from the light emitting structure. The distributed Bragg reflector has a reflectivity of at least 90% for light of a first wavelength in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength range, and the distributed Bragg reflector has a reflectivity of at least 90% for light in a full wavelength range of 400 to 700 nm.

Abstract translation: 一种发光二极管芯片，包括基板，布置在基板上的发光结构，所述发光结构包括布置在第一导电类型半导体层和第二导电类型半导体层之间的有源层，以及分布布拉格反射器 反射从发光结构发出的光。 分布布拉格反射器对于蓝色波长范围内的第一波长的光，绿色波长范围内的第二波长的光和红色波长范围的第三波长的光具有至少90％的反射率， 布喇格反射器对于400至700nm的全波长范围内的光具有至少90％的反射率。

公开(公告)号：US20140209963A1

公开(公告)日：2014-07-31

申请号：US14229693

申请日：2014-03-28

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Sum Geun Lee ,  Jin Cheol Shin ,  Yeo Jin Yoon ,  Kyoung Wan Kim ,  Jeong Hee Yang

IPC: H01L33/38

CPC classification number: H01L33/387 ,  H01L27/153 ,  H01L33/08 ,  H01L33/20 ,  H01L33/38 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A light-emitting diode includes at least two light emitting cells disposed on a substrate and spaced apart from each other, wherein each of the at least two light emitting cells includes a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. Each of the at least two light emitting cells includes a cathode disposed on the first conductivity-type semiconductor layer, an anode disposed on the second conductivity-type semiconductor layer, and the cathode of a first light emitting cell of the at least two light emitting cells is electrically connected in series to the anode of a second light emitting cell of the at least two light emitting cells adjacent to the first light emitting cell by an interconnecting section.

Abstract translation: 发光二极管包括设置在基板上并彼此间隔开的至少两个发光单元，其中至少两个发光单元中的每一个包括第一导电型半导体层，有源层和第二导电 型半导体层。 所述至少两个发光单元中的每一个包括设置在所述第一导电类型半导体层上的阴极，设置在所述第二导电类型半导体层上的阳极和所述至少两个发光的第一发光单元的阴极 电池通过互连部分串联连接到与第一发光单元相邻的至少两个发光单元的第二发光单元的阳极。

公开(公告)号：US20140145218A1

公开(公告)日：2014-05-29

申请号：US14087140

申请日：2013-11-22

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jae Kwon KIM ,  Yeo Jin Yoon ,  Jong Kyu Kim ,  So Ra Lee ,  Sum Geun Lee ,  Hyun Haeng Lee

IPC: H01L27/15

CPC classification number: H01L27/153 ,  H01L27/156 ,  H01L33/06 ,  H01L33/08 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/42 ,  H01L33/62

Abstract: Exemplary embodiments of the present invention provide a light emitting diode including light emitting units disposed on a substrate, and wires connecting the light emitting units to each other, wherein the light emitting units each include a parallelogram-shaped light emitting unit having two acute angles and two obtuse angles, or a triangular light emitting unit having three acute angles.

Abstract translation: 本发明的示例性实施例提供一种发光二极管，其包括设置在基板上的发光单元和将发光单元彼此连接的导线，其中发光单元各自包括具有两个锐角的平行四边形形状的发光单元， 两个钝角，或具有三个锐角的三角形发光单元。

公开(公告)号：US09673355B2

公开(公告)日：2017-06-06

申请号：US14229693

申请日：2014-03-28

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Sum Geun Lee ,  Jin Cheol Shin ,  Yeo Jin Yoon ,  Kyoung Wan Kim ,  Jeong Hee Yang

IPC: H01L33/38 ,  H01L33/62 ,  H01L27/15 ,  H01L33/08 ,  H01L33/20 ,  H01L33/44

CPC classification number: H01L33/387 ,  H01L27/153 ,  H01L33/08 ,  H01L33/20 ,  H01L33/38 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A light-emitting diode includes at least two light emitting cells disposed on a substrate and spaced apart from each other, wherein each of the at least two light emitting cells includes a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. Each of the at least two light emitting cells includes a cathode disposed on the first conductivity-type semiconductor layer, an anode disposed on the second conductivity-type semiconductor layer, and the cathode of a first light emitting cell of the at least two light emitting cells is electrically connected in series to the anode of a second light emitting cell of the at least two light emitting cells adjacent to the first light emitting cell by an interconnecting section.

公开(公告)号：US09349912B2

公开(公告)日：2016-05-24

申请号：US14229656

申请日：2014-03-28

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Kyung Hee Ye ,  Dae Sung Cho ,  Won Cheol Seo ,  Young Eun Yang ,  Sum Geun Lee

IPC: H01L33/08 ,  H05B33/08 ,  H01L27/15 ,  H01L33/38 ,  H01L33/62 ,  H01L33/20

CPC classification number: H01L33/08 ,  H01L27/156 ,  H01L33/20 ,  H01L33/38 ,  H01L33/62 ,  H01L2924/0002 ,  H05B33/0821 ,  H01L2924/00

Abstract: Exemplary embodiments of the present invention relate to a light-emitting device including a single substrate, at least two light-emitting units disposed on the single substrate, each of the at least two light-emitting units including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, a first electrode connected to the first conductivity-type semiconductor layer, and a second electrode connected to the second conductivity-type semiconductor layer, wherein two light-emitting units of the at least two light-emitting units share the first conductivity-type semiconductor layer.

Abstract translation: 本发明的示例性实施例涉及包括单个基板的发光器件，设置在单个基板上的至少两个发光单元，所述至少两个发光单元中的每一个包括第一导电型半导体层， 第二导电型半导体层和设置在第一导电类型半导体层和第二导电类型半导体层之间的有源层，连接到第一导电类型半导体层的第一电极和连接到第二导电类型半导体层的第二电极 第二导电型半导体层，其中所述至少两个发光单元中的两个发光单元共享第一导电类型半导体层。

公开(公告)号：US09343631B2

公开(公告)日：2016-05-17

申请号：US14606863

申请日：2015-01-27

Applicant: Seoul Viosys Co., Ltd.

Inventor： Sum Geun Lee ,  Sang Ki Jin ,  Jin Cheol Shin ,  Jong Kyu Kim ,  So Ra Lee ,  Chung Hoon Lee

IPC: H01L33/00 ,  H01L33/46 ,  H01L27/15 ,  H01L33/22 ,  H01L33/50 ,  H01L33/60

CPC classification number: H01L27/153 ,  H01L33/0008 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/22 ,  H01L33/32 ,  H01L33/42 ,  H01L33/46 ,  H01L33/505 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2933/0025 ,  H01L2933/0033 ,  H01L2933/0041 ,  H01L2933/0058 ,  H01L2924/00014

Abstract: A light-emitting diode chip configured to emit light of a first wavelength range and light of a second wavelength range, including a substrate, a light-emitting structure disposed on a first surface of the substrate, the light-emitting structure including an active layer disposed between a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer, and configured to emit light of the first wavelength range, and first and second distributed Bragg reflectors (DBRs) disposed on a second surface of the substrate. The first DBR is disposed closer to the substrate than the second DBR, the first wavelength range comprises a blue wavelength range, the first DBR comprises a higher reflectivity for light of the second wavelength range than for light of the first wavelength range, and the second DBR comprises a higher reflectivity for light of the first wavelength range than for light of the second wavelength range.

Abstract translation: 一种发光二极管芯片，被配置为发射第一波长范围的光和包括基板的第二波长范围的光，设置在所述基板的第一表面上的发光结构，所述发光结构包括有源层 设置在第一导电类型半导体层和第二导电类型半导体层之间并被配置为发射第一波长范围的光，以及布置在基板的第二表面上的第一和第二分布布拉格反射器（DBR）。 第一DBR被设置为比第二DBR更靠近基板，第一波长范围包括蓝色波长范围，第一DBR包括对于第二波长范围的光比第一波长范围的光更高的反射率， 对于第一波长范围的光，DBR包括比对于第二波长范围的光更高的反射率。

公开(公告)号：US20150270441A1

公开(公告)日：2015-09-24

申请号：US14732455

申请日：2015-06-05

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jae Kwon Kim ,  Sum Geun Lee ,  Kyung Wan Kim ,  Yeo Jin Yoon ,  Duk Il Suh ,  Ji Hye Kim

IPC: H01L33/20 ,  H01L33/16 ,  H01L33/32 ,  H01L27/15 ,  H01L33/06 ,  H01L33/14

CPC classification number: H01L33/20 ,  H01L27/153 ,  H01L33/007 ,  H01L33/06 ,  H01L33/10 ,  H01L33/14 ,  H01L33/16 ,  H01L33/22 ,  H01L33/32

Abstract: Provided are a substrate having concave-convex patterns, a light-emitting diode (LED) including the substrate, and a method of fabricating the LED. The LED includes a substrate, and concave-convex patterns disposed in an upper surface of the substrate and having convexes and concaves defined by the convexes. Unit light-emitting device having a first conductive semiconduct or layer, an active layer, and a second conductive semiconductor layer disposed on the substrate in sequence is present.

Abstract translation: 提供具有凹凸图案的基板，包括该基板的发光二极管（LED）以及制造该LED的方法。 LED包括基板和设置在基板的上表面中并具有由凸部限定的凸起和凹部的凹凸图案。 存在具有依次设置在基板上的第一导电半导体层或有源层，第二导电半导体层的单元发光器件。

公开(公告)号：US10128306B2

公开(公告)日：2018-11-13

申请号：US15401599

申请日：2017-01-09

Applicant: Seoul Viosys Co., Ltd.

Inventor： Sum Geun Lee ,  Sang Ki Jin ,  Jin Cheol Shin ,  Jong Kyu Kim ,  So Ra Lee ,  Chung Hoon Lee

IPC: H01L33/00 ,  H01L27/15 ,  H01L33/46 ,  H01L33/22 ,  H01L33/50 ,  H01L33/60 ,  H01L33/62 ,  H01L33/06 ,  H01L33/32 ,  H01L33/42

Abstract: A light-emitting diode package including a body and leads. The body comprising a mounting surface. The light emitting diode package also includes a light emitting diode chip including a substrate and a plurality of light emitting cells disposed on the substrate and positioned to be spaced apart from each other, each of the plurality of light emitting cells comprising an active layer disposed between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer. The light emitting diode package also includes a phosphor member disposed on the light-emitting diode chip and a distributed Bragg reflector disposed on the substrate and between the plurality of light emitting cells.

公开(公告)号：US09680060B2

公开(公告)日：2017-06-13

申请号：US15003928

申请日：2016-01-22

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jae Kwon Kim ,  Yeo Jin Yoon ,  Jong Kyu Kim ,  So Ra Lee ,  Sum Geun Lee ,  Hyun Haeng Lee

IPC: H01L33/00 ,  H01L33/22 ,  H01L27/15 ,  H01L33/08 ,  H01L33/62 ,  H01L33/06 ,  H01L33/32 ,  H01L33/42 ,  H01L33/20

CPC classification number: H01L27/153 ,  H01L27/156 ,  H01L33/06 ,  H01L33/08 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/42 ,  H01L33/62

Abstract: A light emitting diode includes a substrate including a concave-convex pattern having concave portions and convex portions, a first light emitting unit disposed on the substrate, a second light emitting unit disposed on the substrate, a first wire connecting the first light emitting unit to the second light emitting unit over the concave-convex pattern, and an insulation layer disposed between the concave-convex pattern and the wire. The insulation layer has a shape corresponding to the concave-convex pattern.

公开(公告)号：US09577157B2

公开(公告)日：2017-02-21

申请号：US15069260

申请日：2016-03-14

Applicant: Seoul Viosys Co., Ltd.

Inventor： Sum Geun Lee ,  Sang Ki Jin ,  Jin Cheol Shin ,  Jong Kyu Kim ,  So Ra Lee ,  Chung Hoon Lee

IPC: H01L33/00 ,  H01L33/46 ,  H01L27/15 ,  H01L33/22 ,  H01L33/50 ,  H01L33/60 ,  H01L33/62

CPC classification number: H01L27/153 ,  H01L33/0008 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/22 ,  H01L33/32 ,  H01L33/42 ,  H01L33/46 ,  H01L33/505 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2933/0025 ,  H01L2933/0033 ,  H01L2933/0041 ,  H01L2933/0058 ,  H01L2924/00014

Abstract: A light-emitting diode package, including a package body and leads, the package body including a mounting surface, a light-emitting structure disposed on the mounting surface, the light-emitting structure including an active layer disposed between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer, a phosphor layer disposed on the light-emitting structure, and a distributed Bragg reflector disposed between the light-emitting structure and the mounting surface. The distributed Bragg reflector includes a first distributed Bragg reflector and a second distributed Bragg reflector, and an optical thickness of material layers within the first distributed Bragg reflector is greater than an optical thickness of material layers within the second distributed Bragg reflector.

Abstract translation: 一种包括封装体和引线的发光二极管封装，所述封装体包括安装表面，设置在所述安装表面上的发光结构，所述发光结构包括设置在第一导电型半导体 层和第二导电型半导体层，设置在发光结构上的荧光体层和布置在发光结构和安装表面之间的分布式布拉格反射器。 分布式布拉格反射器包括第一分布式布拉格反射器和第二分布布拉格反射器，并且第一分布式布拉格反射器内的材料层的光学厚度大于第二分布布拉格反射器内材料层的光学厚度。