- 专利标题： FinFETs with strained well regions
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申请号： US15687753申请日： 2017-08-28
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公开(公告)号： US10158015B2公开(公告)日： 2018-12-18
- 发明人: Yi-Jing Lee , Cheng-Hsien Wu , Chih-Hsin Ko , Clement Hsingjen Wann
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater Matsil, LLP
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/66 ; H01L29/10 ; H01L29/417 ; H01L21/8234 ; H01L29/15 ; H01L29/06 ; H01L21/3105 ; H01L29/778 ; H01L29/165 ; H01L21/321 ; H01L29/161 ; H01L21/02 ; H01L29/08 ; H01L29/43
摘要：
A device includes a substrate and insulation regions over a portion of the substrate. A first semiconductor region is between the insulation regions and having a first conduction band. A second semiconductor region is over and adjoining the first semiconductor region, wherein the second semiconductor region includes an upper portion higher than top surfaces of the insulation regions to form a semiconductor fin. The semiconductor fin has a tensile strain and has a second conduction band lower than the first conduction band. A third semiconductor region is over and adjoining a top surface and sidewalls of the semiconductor fin, wherein the third semiconductor region has a third conduction band higher than the second conduction band.
公开/授权文献
- US20170352596A1 FinFETs with Strained Well Regions 公开/授权日：2017-12-07
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