- 专利标题: ECC and read adjustment based on dynamic memory error model estimation
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申请号: US15371167申请日: 2016-12-06
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公开(公告)号: US10158380B2公开(公告)日: 2018-12-18
- 发明人: Eran Sharon , Alexander Bazarsky , Idan Goldenberg , Stella Achtenberg , Omer Fainzilber , Ran Zamir
- 申请人: SANDISK TECHNOLOGIES LLC
- 申请人地址: US TX Addison
- 专利权人: SanDisk Technologies LLC
- 当前专利权人: SanDisk Technologies LLC
- 当前专利权人地址: US TX Addison
- 代理机构: Michael Best & Friedrich LLP
- 主分类号: G11C29/00
- IPC分类号: G11C29/00 ; H03M13/00 ; G06F3/06 ; G06F11/10 ; H03M13/29
摘要:
A device includes a memory and a controller coupled to the memory. The controller is configured to determine a first count of bits of a representation of data that are estimated to be erroneous and a second count of bits of the representation of data that have high estimated reliability and are estimated to be erroneous. The controller is further configured to modify at least one read parameter or at least one decode parameter based on the first count and the second count.
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